Amorphous multi-component metallic thin films for electronic devices
An electronic structure comprising: (a) a first metal layer; (b) a second metal layer; (c) and at least one insulator layer located between the first metal layer and the second metal layer, wherein at least one of the metal layers comprises an amorphous multi-component metallic film. In certain embodiments, the construct is a metal-insulator-metal (MIM) diode.
1. An electronic device structure comprising:
(a) a first metal layer;
(b) a second metal layer; and
(c) at least one insulator layer located between the first metal layer and the second metal layer,
wherein at least one of the metal layers comprises an amorphous multi-component metallic film and wherein the amorphous multi-component metallic film is selected from ZrCuAlNi or TiAl.
2. An electronic device structure comprising:
(a) a first metal layer;
(b) a second metal layer; and
(c) at least one insulator layer located between the first metal layer and the second metal layer,
wherein at least one of the metal layers comprises an amorphous multi-component metallic film and wherein the first metal layer comprises an amorphous multi-component metallic film comprising ZrCuAlNi.
3. An electronic device structure comprising:
(a) a first metal layer;
(b) a second metal layer; and
(c) at least one insulator layer located between the first metal layer and the second metal layer,
wherein at least one of the metal layers comprises an amorphous multi-component metallic film and wherein the first metal layer comprises the amorphous multi-component metallic film and the second metal layer is not an amorphous multi-component metallic film.
4. The structure of claim 3 , wherein the first metal layer and the insulator layer form a first metal layer/insulator layer interface and the first metal layer/insulator layer interface enables Fowler-Nordheim tunneling when a predetermined electric field is applied to the diode structure.
5. An electronic device structure comprising:
(a) a first metal layer;
(b) a second metal layer; and
(c) at least one insulator layer located between the first metal layer and the second metal layer,
wherein at least one of the metal layers comprises an amorphous multi-component metallic film and wherein the first metal layer comprises an amorphous multi-component metallic film comprising TiAl.
6. The structure according to any one of claims 1 - 2 , wherein the structure is a metal-insulator-metal diode and the first metal layer is a first electrode and the second metal layer is a second electrode.
7. A method for making a metal-insulator-metal diode comprising:
forming a first electrode on a first substrate wherein the first electrode defines a first surface facing the first substrate and an opposing second surface;
forming an insulator layer on the second surface of the first electrode, wherein the insulator layer defines a first surface facing the first electrode and an opposing second surface; and
forming a second electrode on the second surface of the insulator layer,
wherein at least one of the electrodes comprises an amorphous multi-component metallic film and wherein the amorphous multi-component metallic film is selected from ZrCuAlNi or TiAl.