IP Library › Granted Patent US 8,436,626
Granted Patent B2
US 8,436,626 · App. 12/640,138 · Granted May 7, 2013

Cascaded-based de-embedding methodology

Inventor: Hsiu-Ying Cho (Hsin-Chu, TW)
Assignee: Taiwan Semiconductor Manfacturing Company, Ltd.
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Quick Facts
Patent No.
US 8,436,626
App. No.
12/640,138
Granted
May 7, 2013
Kind
B2
Abstract

An embodiment is a method for de-embedding. The method comprises forming a primary structure in a semiconductor chip and forming an auxiliary structure in the semiconductor chip. The auxiliary structure replicates a first portion of the primary structure. The method further comprises determining a transmission matrix for each of the primary structure and the auxiliary structure based on measurements and extracting a transmission matrix of a first component of the primary structure by determining a product of the transmission matrix of the primary structure and an inverse of the transmission matrix of the auxiliary structure.

Claims (31)

1. A method for de-embedding, the method comprising:

forming a primary structure in a substrate, the primary structure consisting of a first portion and a second portion, the second portion being cascaded sequentially from the first portion;

forming an auxiliary structure in the substrate, wherein the auxiliary structure replicates one of the first portion or the second portion of the primary structure;

determining a transmission matrix for each of the primary structure and the auxiliary structure based on measurements; and

extracting a transmission matrix of a first component of the primary structure by determining a product of the transmission matrix of the primary structure and an inverse of the transmission matrix of the auxiliary structure.

2. The method of claim 1 , wherein the auxiliary structure replicates both the first portion and the second portion of the primary structure such that the primary structure is symmetrical.

3. The method of claim 1 , further comprising an additional auxiliary structure replicating the second portion of the primary structure, wherein the first portion and the second portion are different such that the primary structure is asymmetrical.

4. The method of claim 1 , further comprising extracting a transmission matrix of a second component by determining a product of the transmission matrix of the auxiliary structure and an inverse of the transmission matrix of the first component.

5. The method of claim 1 , wherein the primary structure comprises a transmission line.

6. A method for de-embedding a cascaded network, the method comprising:

measuring electrical characteristics of a primary transmission line structure and a first auxiliary transmission line structure to determine a transmission matrix of each of the primary transmission line structure and the first auxiliary transmission line structure, wherein the primary transmission line structure and the first auxiliary transmission line structure are formed in substrate, and wherein the auxiliary transmission line structure replicates a first portion of the primary transmission line structure; and

extracting a transmission matrix of a first component of the primary transmission line structure by multiplying the transmission matrix of the primary transmission line structure and an inverse of the transmission matrix of the auxiliary transmission line structure.

7. The method of claim 6 , further comprising forming the primary transmission line structure and the first auxiliary transmission line structure in the substrate.

8. The method of claim 6 , further comprising forming a modified primary transmission line structure in an additional substrate in response to the transmission matrix of the first component of the primary transmission line structure.

9. The method of claim 6 , wherein the first auxiliary transmission line structure further replicates a second portion of the primary structure.

10. The method of claim 6 , wherein the primary transmission line structure is symmetrical.

11. The method of claim 6 , wherein the measuring further comprises measuring electrical characteristics of a second auxiliary transmission line structure to determine a transmission matrix of the second auxiliary transmission line structure, wherein the second auxiliary transmission line structure replicates a second portion of the primary transmission line structure and is formed in the substrate.

12. The method of claim 6 , wherein the primary transmission line structure is asymmetrical.

13. The method of claim 6 , further comprising extracting a transmission matrix of a second component by multiplying the transmission matrix of the auxiliary transmission line structure and an inverse of the transmission matrix of the first component.

14. A method for de-embedding components, the method comprising:

forming a dual transmission line structure in a substrate;

forming a first auxiliary transmission line structure in the substrate, wherein the first auxiliary transmission line structure is representative of a first portion of the dual transmission line structure;

measuring electrical properties of the dual transmission line structure and the first auxiliary transmission line structure;

determining a transmission matrix for each of the dual transmission line structure and the first auxiliary transmission line structure based on the measuring the electrical properties; and

multiplying the transmission matrix of the dual transmission line structure and an inverse of the transmission matrix of the first auxiliary transmission line structure to extract a transmission matrix of a first component of the dual transmission line structure.

15. The method of claim 14 , wherein the first auxiliary transmission line structure further replicates a second portion of the dual transmission line structure.

16. The method of claim 14 , further comprising forming a second auxiliary transmission line structure in the substrate, wherein the second auxiliary transmission line structure is representative of a second portion of the dual transmission line structure, wherein the second portion is different from the first portion, and wherein the measuring the electrical properties further comprises measuring electrical properties of the second auxiliary transmission line structure, and wherein the determining further comprises determining a transmission matrix of the second auxiliary transmission lines structure based on the measuring the electrical properties.

17. The method of claim 16 , further comprising multiplying the transmission matrix of the dual transmission line structure and an inverse of the transmission matrix of the second auxiliary transmission line structure to extract the transmission matrix of the first component of the dual transmission line structure.

18. The method of claim 14 , further comprising multiplying the transmission matrix of the first auxiliary transmission line structure and an inverse of the transmission matrix of the first component to extract a transmission matrix of a second component of the dual transmission line structure.

19. The method of claim 1 , wherein the primary structure consists essentially of a transmission line and pad structures.

20. The method of claim 6 , wherein the primary structure consists of the first portion and a second portion, the second portion being cascaded sequentially from the first portion.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2009
From: CHO, HSIU-YING
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 023666/0751 →
Continuity (1)
Related Publication 20110151596A1 · Jun 23, 2011