IP Library Granted Patent US 8,437,216
Granted Patent B2
US 8,437,216 · App. 13/270,710 · Granted May 7, 2013

Data write training method and semiconductor device performing the same

Inventors: Tae-Young Oh (Seoul, KR); Young-Soo Sohn (Seoul, KR); Seung-Jun Bae (Hwaseong-si, KR); Kwang-Il Park (Yongin-si, KR)
Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,437,216
App. No.
13/270,710
Granted
May 7, 2013
Kind
B2
Abstract

Embodiments may be directed to a method of operating a semiconductor device, the method including receiving a first write training command, receiving a first write data responsive to the first write training command through a first data line, and transmitting the first write data through a second data line. Transmitting the first write data is performed without an additional training command.

Claims (23)

1. A method of operating a semiconductor memory device, the method comprising:

receiving a first write training command;

receiving a first write data responsive to the first write training command through a first data line; and

transmitting the first write data through a second data line,

wherein, transmitting the first write data is performed without an additional training command.

2. The method as claimed in claim 1 , further comprising, after receiving the first write data, storing the first write data to a first write storage; transferring the first write data from the first write storage to a first read storage; and loading the first write data from the first read storage to the second data line.

3. The method as claimed in claim 1 , wherein the first data line comprises a plurality of first unit data lines, and a representative data is selected from data transmitted by the first unit data lines and transmitted through the second data line.

4. The method as claimed in claim 3 , wherein the representative data is a mean value of data transmitted by the first unit data lines.

5. The method as claimed in claim 3 , wherein the representative data is an encoded value of data transmitted by the first unit data lines.

6. The method as claimed in claim 1 , further comprising, after transmitting the write data, receiving a second write training command; receiving a second write data responsive to the second write training command through the second data line; and transmitting the second write data through the first data line.

7. The method as claimed in claim 6 , wherein transmitting the second write data is performed without an additional training command.

8. The method as claimed in claim 6 , further comprising, after receiving the second write data, storing the second write data to a second write storage; transferring the second write data from the second write storage to a second read storage; and loading the second write data from the second read storage to the first data line.

9. The method as claimed in claim 6 , wherein the second data line comprises a plurality of second unit data lines, and a representative data is selected from data transmitted by the second unit data lines and transmitted through the first data line.

10. The method as claimed in claim 9 , wherein the representative data is a mean value of data transmitted by the second unit data lines.

11. The method as claimed in claim 10 , wherein the representative data is an encoded value of data transmitted by the second unit data lines.

12. A semiconductor device, comprising:

a first data storage configured to receive a first training data responsive to a first data training command through a first data line; and

a second data storage configured to receive and store the first training data from the first data storage,

wherein, the first training data of the second data storage is loaded to a second data line and transmitted to outside.

13. The semiconductor device as claimed in claim 12 , wherein transmitting of the first training data through the second data line is performed without additional data training command.

14. The semiconductor device as claimed in claim 12 , wherein the semiconductor device further comprises a third data storage configured to receive a second training data responsive to a second data training command through the second data line; and a fourth data storage configured to receive the second training data from the third data storage.

15. The semiconductor device as claimed in claim 1 , wherein the second training data from the fourth storage is loaded to the first data line and transmitted to outside.

16. The semiconductor device as claimed in claim 15 , wherein transmitting of the second training data through the first data line is performed without additional data training command.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 11, 2011
From: OH, TAE-YOUNG; SOHN, YOUNG-SOO; BAE, SEUNG-JUN; PARK, KWANG-IL
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 027044/0026 →
Priority Claims (1)
KR 10-2010-0098794 · Oct 11, 2010 · national
Continuity (1)
Related Publication 20120087194A1 · Apr 12, 2012