Light emitting semiconductor diode
View Patent ↗Visible and infrared light sources on silicon that have several attractive properties with respect to integrated optics. First, the devices are operational at room temperature and strictly require no thermal processing in their synthesis (although low temperature annealing can be used to form Ohmic contacts). These devices could therefore be included at any stage of chip fabrication. The special ease of synthesis of these silicon LEDs enables simple fabrication of surface structures such as patterned emitters and photonic crystal surfaces that enhance light emission in the forward direction. The LEDs are color-switchable—by reversing the current one can switch from infrared emission to visible emission. The lifetime of the luminescence is much shorter than the standard carrier recombination time in silicon, suggesting direct modulation of the emitted light.
1. A method of operating a light emitting diode, comprising:
providing a semiconductor wafer with a surface layer that is sufficiently electrically insulating to allow quantum tunneling of charge carriers through the surface layer, the surface layer having a thickness of 3 nm or less, and having a conductive layer on the surface layer, the conductive layer being electrically conductive and at least sufficiently transparent to allow electromagnetic radiation to pass through the conductive layer, in which the Fermi levels of the semiconductor wafer and the conductive layer are selected so that pulsed electrical bias across the surface layer changes the operation of the light emitting diode from accumulation to depletion mode; and
applying a pulsed bias through contacts on the semiconductor wafer and conductive layer across the surface layer to cause the operation of the light emitting diode to switch between operational modes including accumulation and depletion modes and cause the light emitting diode to emit different wavelengths of electromagnetic radiation.
2. The method of claim 1 in which the semiconductor wafer comprises a semiconductor having an indirect bandgap.
3. The method of claim 2 in which the semiconductor wafer comprises silicon.
4. The method of claim 3 in which the surface layer comprises silicon dioxide.
5. The method of claim 1 in which the conductive layer comprises a material transparent to visible light.
6. The method of claim 1 in which the thickness of the surface layer is less than 2 nm.
7. The method of claim 1 in which the operational modes further include an off mode.