Particle beam systems and methods

1. An inspection method comprising:

focusing a particle beam onto a sample;

operating at least one detector located close to the sample;

assigning detection signals generated by the at least one detector to different intensity intervals;

determining, based on the detection signals assigned to the intensity intervals, at least one first signal component related to electrons incident on the detector; and

determining, based on the detection signals assigned to the intensity intervals, at least one second signal component related to X-rays incident on the detector.

2. The inspection method according to claim 1 , wherein, when the detection signals are represented as a spectrum in dependence of an intensity of the detection signals, the first signal component corresponds to a broad peak of the spectrum and the second signal component corresponds to a narrow peak of the spectrum.

3. The inspection method according to claim 1 , further comprising determining at least one chemical element contained in the sample based on the at least one second signal component.

4. The inspection method according to claim 1 , further comprising focusing the particle beam at plural different locations of the sample.

5. The inspection method according to claim 4 , further comprising recording, for each of the plural locations of the sample, at least one first value which is determined based on the at least one first signal component and at least one second value which is determined based on the at least one second signal component.

6. The inspection method according to claim 4 , further comprising generating a first map representing an electron microscopic image of the sample and generating a second map representing an image of an elemental composition of the sample.

7. The inspection method according to claim 6 , further comprising displaying the first and second maps superimposed with each other on a display medium.

8. The inspection method according to claim 1 , wherein the at least one detector is a semiconductor detector.

9. The inspection method according to claim 8 , wherein the semiconductor detector is a silicon drift detector.

10. The inspection method according to claim 1 , wherein at least one membrane is positioned between the sample and the at least one detector.

11. The inspection method according to claim 10 , comprising operating first and second detectors, wherein a first membrane is positioned between the sample and the first detector, wherein a second membrane is positioned between the sample and the second detector and wherein the first and second membranes differ with respect to at least one of a thickness and an elemental composition.

12. The inspection method according to claim 11 , wherein a thickness of the second membrane is at least 1.1 times greater than a thickness of the first membrane.

13. The inspection method according to claim 11 , wherein a concentration of a chemical element present in the first membrane is at least 1.1 times greater than a concentration of the chemical element in the first membrane.

14. The inspection method according to claim 11 , comprising:

assigning detection signals generated by the first detector to different first intensity intervals;

assigning detection signals generated by the second detector to different second intensity intervals;

determining, based on the detection signals assigned to the first and second intensity intervals, the at least one first signal component related to electrons incident on the first and second detectors; and

determining, based on the detection signals assigned to the first and second intensity intervals, at least one second signal component related to X-rays incident on the first and second detectors.

15. The inspection method according to claim 1 , comprising operating plural detectors and determining a three-dimensional structure of the sample based on signal components determined from detection signals of the different detectors.

16. A particle beam system comprising:

a particle beam source configured to generate a primary particle beam;

an objective lens configured to focus the primary particle beam in an object plane;

a detection system arranged between the objective lens and the object plane, the detection system comprising at least one detector; and

a computer configured to analyze output signals of the at least one detector and to output a first value representing an electron intensity and a second value representing an elemental composition.

17. A method of manufacture of a miniaturized object, the method comprising:

focusing a particle beam onto a region of an object;

operating at least one detector located close to the object;

determining, based on detection signals received from the at least one detector, an amount of electrons emanating from the object due to the particle beam;

determining, based on detection signals received from the at least one detector, an amount of X-rays emanating from the object due to the particle beam;

determining, based on the determined amount of X-rays emanating from the object, a chemical composition of the object within the region of the object; and

removing material from the object based on the determined amounts of electrons emanating from the object and the determined chemical composition of the object.

18. The method according to claim 17 , wherein the removing of the material comprises focusing of an ion beam onto the region of the object.

19. The method according to claim 18 , wherein the removing of the material comprises supplying a reactive gas to the region of the object.

20. The method according to claim 18 , wherein the object has a thickness of less than 1 μm.