Semiconductor device and method for fabricating the same
A semiconductor device includes an electronic part including an electrode, a substrate including a substrate electrode electrically connected to the first electrode on an upper surface thereof, the first substrate electrode and the first electrode being arranged, facing each other, a connecting member configured to connect the electrode with the substrate electrode, and a sealing material including a first resin portion which contains flux and contacts at least a connection portion between the connecting member and the substrate electrode, and a second resin portion which contains a lower concentration of flux than that of the first resin portion. A gap between the electronic part and the substrate is filled with the sealing film.
1. A semiconductor device comprising:
a first electronic part including a first electrode;
a first substrate including a first substrate electrode electrically connected to the first electrode on an upper surface thereof, wherein the first substrate electrode and the first electrode are arranged, facing each other;
a first connecting member configured to connect the first electrode with the first substrate electrode; and
a sealing material including a first resin portion which contains flux and contacts at least a first connection portion between the first connecting member and the first substrate electrode, and a second resin portion which does not contain the flux or contains a lower concentration of the flux than that of the first resin portion,
wherein the number of the first electrodes and the number of the first substrate electrodes are both two or more,
the first electronic part has a first region in which the first electrodes are arranged at a first pitch, and a second region in which the first electrodes are arranged at a second pitch broader than the first pitch,
the sealing material includes the first resin portion and the second resin portion in a portion thereof corresponding to the first region, and includes the second resin portion in a portion thereof corresponding to the second region, and
the sealing material has a double-layer structure having the first resin portion which is in the shape of a layer surrounding the first substrate electrode and the second resin portion which is in the shape of a layer in the region corresponding to the first region, and has a single-layer structure having only the second resin portion which is in the shape of a layer in the region corresponding to the second region.
2. The semiconductor device of claim 1 , wherein the first connecting member is solder.
3. The semiconductor device of claim 1 , wherein the first connecting member includes solder and a protruding electrode provided on the first electrode.
4. A semiconductor device comprising:
a first electronic part including a first electrode;
a first substrate including a first substrate electrode electrically connected to the first electrode on an upper surface thereof, wherein the first substrate electrode and the first electrode are arranged, facing each other;
a first connecting member configured to connect the first electrode with the first substrate electrode;
a sealing material including a first resin portion which contains flux and contacts at least a first connection portion between the first connecting member and the first substrate electrode, and a second resin portion which does not contain the flux or contains a lower concentration of the flux than that of the first resin portion; and
a second electronic part mounted on the upper surface of the first substrate, and including a first semiconductor element and a second electrode electrically connected to a circuit-formed surface of the first semiconductor element,
wherein a second substrate electrode electrically connected to the second electrode is further provided on the upper surface of the first substrate, and
the first electronic part is a semiconductor package including a second substrate including the first electrode on a back surface thereof, and a second semiconductor element mounted on an upper surface of the second substrate.
5. The semiconductor device of claim 4 , further comprising:
a second connecting member configured to connect the second electrode with the second substrate electrode,
wherein the second electrode is provided on the circuit-formed surface of the first semiconductor element,
the first semiconductor element is mounted on the first substrate with the circuit-formed surface of the first semiconductor clement facing the upper surface of the first substrate, and
the first resin portion contacts at least a second connection portion between the second connecting member and the second substrate electrode.
6. The semiconductor device of claim 4 , further comprising:
a second connecting member configured to connect the second electrode with the second substrate electrode,
wherein the second electronic part further includes a third substrate including the second electrode provided on a back surface thereof, and the first semiconductor element provided on an upper surface thereof, and
the first resin portion contacts at least a second connection portion between the second connecting member and the second substrate electrode.
7. The semiconductor device of claim 4 , further comprising:
a fine metal line configured to connect the second substrate electrode to the second electrode,
wherein the first semiconductor element is mounted on the first substrate with the circuit-formed surface of the first semiconductor element on which the second electrode is provided facing upward.