Semiconductor device and method of blowing fuse thereof
A semiconductor device comprises an active region including a core circuit forming region and a buffer forming region, and a fuse element forming region arranged on a corner of the active region and to be able to be electrically fused. It is possible to arrange the fuse element without forming the fuse in the core circuit forming region by arranging the fuse element forming region at the corner of the active region.
1. A semiconductor device comprising:
a chip die;
an active region including a core circuit forming region and a buffer forming region;
a fuse element forming region on a corner of the active region and able to be electrically fused; and
a pad forming region around the buffer forming region,
wherein the active region, the fuse element forming region, and the pad forming region are on the chip die,
wherein the fuse element forming region is coupled to a first pad and to a second pad in the pad forming region, where the first pad is opened to an external terminal and the second pad is bonded to the external terminal by wire bonding.
2. The semiconductor device according to claim 1 , wherein the first pad and the second pad are near the corner of the active region.
3. The semiconductor device according to claim 1 , wherein the first pad is closer to a corner of the chip die than the second pad, and the corner of the chip die is closest a corner of the fuse element forming region.
4. The semiconductor device according to claim 1 , further comprising a wire for fusing connected to a fuse of the fuse element forming region, the wire for fusing being formed in several wire layers arranged in an upper layer of the corner of the active region.
5. The semiconductor device according to claim 1 , wherein the first pad cannot be bonded to the external terminal.
6. A semiconductor device comprising:
a chip die; and
a fuse element on the chip die and able to be electrically fused,
wherein the fuse element is coupled to a first pad and a second pad, the first pad is opened to an external terminal, and the second pad is bonded to the external terminal by a wire bonding.
7. The semiconductor device according to claim 6 , further comprising a wire for fusing connected to the fuse element, the wire for fusing being formed in several wire layers arranged in an upper layer of a corner of the chip die.
8. The semiconductor device according to claim 6 , wherein the first pad is arranged closer to a corner of the chip die than the second pad, and the corner of the chip die is closest a corner of the fuse element.
9. The semiconductor device according to claim 6 , wherein the first pad cannot be bonded to the external terminal.
10. A semiconductor device comprising:
a chip die;
a first group of pads arranged in a first direction parallel to a first side of the chip die;
a second group of pads arranged in a second direction perpendicular to the first direction and parallel to a second side of the chip die; and
a fuse macro on the chip die and able to be electrically fused,
wherein the fuse macro is coupled to a first pad, a second pad, and a third pad, where the first pad and the second pad belong to the first group of pads and the third pad belongs to the second group of pads,
wherein the first pad is opened to an external terminal, and the second pad is bonded to the external terminal by a wire bonding.
11. The semiconductor device according to claim 10 , wherein the first pad is arranged closer to a corner of the chip die than the second pad, and the corner of the chip die is closest a corner of the fuse macro.
12. The semiconductor device according to claim 10 , wherein the fuse macro has at least one fuse element.
13. The semiconductor device according to claim 12 , wherein the fuse element is coupled to the first pad and the second pad.
14. The semiconductor device according to claim 10 , wherein said fuse macro has a plurality of fuse elements.
15. The semiconductor device according to claim 10 , further comprising a wire for fusing connected to the fuse macro, where the wire for fusing is formed in several wire layers arranged in an upper layer of a corner of the chip die.
16. The semiconductor device according to claim 10 , wherein the first pad cannot be bonded to the external terminal.