Niobium and vanadium organometallic precursors for thin film deposition
Disclosed are methods for forming a metal-containing layer on a substrate. A vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt 2 ) 2 ; (Cp)V(=NtBu)(NMe 2 ) 2 ; (Cp)V(=NtBu)(NEtMe) 2 ; (Cp)V(═NiPr)(NEt 2 ) 2 ; (Cp)V(═NiPr)(NMe 2 ) 2 ; (Cp)V(═NiPr)(NEtMe) 2 ; (Cp)V(═NC 5 H 11 )(NEt 2 ) 2 ; (Cp)V(═NC 5 H 11 )(NMe 2 ) 2 ; (Cp)V(═NC 5 H 11 )(NEtMe) 2 ; (Cp)Nb(=NtBu)(NEt 2 ) 2 ; (Cp)Nb(=NtBu)(NMe 2 ) 2 ; (Cp)Nb(=NtBu)(NEtMe) 2 ; (Cp)Nb(═NiPr)(NEt 2 ) 2 ; (Cp)Nb(═NiPr)(NMe 2 ) 2 ; (Cp)Nb(═NiPr)(NEtMe) 2 ; (Cp)Nb(═NC 5 H 11 )(NEt 2 ) 2 ; (Cp)Nb(═NC 5 H 11 )(NMe 2 ) 2 ; and (Cp)Nb(═NC 5 H 11 )(NEtMe) 2 is provided. At least one reaction gas selected from the group consisting of ozone and water is provided. The vapor and the reaction gas react with the substrate according to a deposition process to form the metal-containing layer on at least one surface of the substrate.
1. A method for forming a metal-containing layer on a substrate, the method comprising the steps of:
a) providing a vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt 2 ) 2 ; (Cp)V(=NtBu)(NMe 2 ) 2 ; (Cp)V(=NtBu)(NEtMe) 2 ; (Cp)V(═NiPr)(NEt 2 ) 2 ; (Cp)V(═NiPr)(NMe 2 ) 2 ; (Cp)V(═NiPr)(NEtMe) 2 ; (Cp)V(═NC 5 H 11 )(NEt 2 ) 2 ; (Cp)V(═NC 5 H 11 )(NMe 2 ) 2 ; (Cp)V(═NC 5 H 11 )(NEtMe) 2 ; (Cp)Nb(=NtBu)(NEt 2 ) 2 ; (Cp)Nb(=NtBu)(NMe 2 ) 2 ; (Cp)Nb(=NtBu)(NEtMe) 2 ; (Cp)Nb(═NiPr)(NEt 2 ) 2 ; (Cp)Nb(═NiPr)(NMe 2 ) 2 ; (Cp)Nb(═NiPr)(NEtMe) 2 ; (Cp)Nb(═NC 5 H 11 )(NEt 2 ) 2 ; (Cp)Nb(═NC 5 H 11 )(NMe 2 ) 2 ; and (Cp)Nb(═NC 5 H 1 1 )(NEtMe) 2 ;
b) providing at least one reaction gas selected from the group consisting of ozone and water; and
c) reacting the vapor and the reaction gas with the substrate, according to a deposition process, to form the metal-containing layer on at least one surface of the substrate.
2. The method of claim 1 , wherein the deposition process is an atomic layer deposition process.
3. The method of claim 1 , wherein the deposition process is a chemical vapor deposition process.
4. The method of claim 1 , further comprising the step:
d) reacting the metal-containing layer obtained in step c) with a reagent selected from the group consisting of another metal source, reducing reactants, nitriding reactants, oxidizing reactants, and combinations thereof.
5. The method of claim 1 , wherein the vapor provided in step a) further comprises at least one precursor compound containing a metal M 2 , and the metal-containing layer formed in step c) contains two metals M 1 and M 2 , wherein M 1 is Vanadium or Niobium.
6. The method of claim 1 , wherein a temperature of the substrate is 100° C. to 700° C. and wherein the deposition chamber containing the substrate has a pressure of 1.33 Pa to 100 kPa.
7. The method of claim 6 , wherein the temperature is 150° C. to 450° C. and the pressure is below 25 kPa.
8. The method of claim 1 , further comprising the step of purging excess vapor comprising the at least one precursor compound from the substrate with an inert gas selected from the group consisting of hydrogen, nitrogen, helium, argon, and mixtures thereof.
9. A method of manufacturing a semiconductor structure, comprising the steps of:
forming a metal-containing layer on the semiconductor substrate by:
a) providing a vapor comprising at least one precursor compound selected from the group consisting of (Cp)V(=NtBu)(NEt 2 ) 2 ; (Cp)V(=NtBu)(NMe 2 ) 2 ; (Cp)V(=NtBu)(NEtMe) 2 ; (Cp)V(═NiPr)(NEt 2 ) 2 ; (Cp)V(═NiPr)(NMe 2 ) 2 ; (Cp)V(═NiPr)(NEtMe) 2 ; (Cp)V(═NC 5 H 11 )(NEt 2 ) 2 ; (Cp)V(═NC 5 H 11 )(NMe 2 ) 2 ; (Cp)V(═NC 5 H 11 )(NEtMe) 2 ; (Cp)Nb(=NtBu)(NEt 2 ) 2 ; (Cp)Nb(=NtBu)(NMe 2 ) 2 ; (Cp)Nb(=NtBu)(NEtMe) 2 ; (Cp)Nb(═NiPr)(NEt 2 ) 2 ; (Cp)Nb(═NiPr)(NMe 2 ) 2 ; (Cp)Nb(═NiPr)(NEtMe) 2 ; (Cp)Nb(═NC 5 H 11 )(NEt 2 ) 2 ; (Cp)Nb(═NC 5 H 11 )(NMe 2 ) 2 ; and (Cp)Nb(═NC 5 H 11 )(NEtMe) 2 ;
b) providing at least one reaction gas selected from the group consisting of ozone and water; and
c) reacting the vapor and the reaction gas with the semiconductor substrate, according to a deposition process, to form the metal-containing layer on at least one surface of the semiconductor substrate.
10. The method of claim 9 , wherein the deposition process is an atomic layer deposition process.
11. The method of claim 9 , wherein the deposition process is a chemical vapor deposition process.
12. The method of claim 9 , further comprising the step:
d) reacting the metal-containing layer obtained in step c) with a reagent selected from the group consisting of another metal source, reducing reactants, nitriding reactants, oxidizing reactants, and combinations thereof.
13. The method of claim 9 , wherein the vapor provided in step a) further comprises at least one precursor compound containing a metal M 2 , and the metal-containing layer formed in step c) contains two metals M 1 and M 2 , wherein M 1 is Vanadium or Niobium.
14. The method of claim 9 , further comprising the step of purging excess vapor comprising the at least one precursor compound from the substrate with an inert gas selected from the group consisting of hydrogen, nitrogen, helium, argon, and mixtures thereof.
15. A compound selected from the group consisting of:
(Cp)V(=NtBu)(NEt 2 ) 2
(Cp)V(=NtBu)(NMe 2 ) 2
(Cp)V(=NtBu)(NEtMe) 2
(Cp)V(═NiPr)(NEt 2 ) 2
(Cp)V(═NiPr)(NMe 2 ) 2
(Cp)V(═NiPr)(NEtMe) 2
(Cp)V(═NC 5 H 11 )(NEt 2 ) 2
(Cp)V(═NC 5 H 11 )(NMe 2 ) 2 and
(Cp)V(═NC 5 H 11 )(NEtMe) 2 .
16. A compound selected from the group consisting of:
(Cp)Nb(═NiPr)(NEt 2 ) 2
(Cp)Nb(═NiPr)(NMe 2 ) 2
(Cp)Nb(═NiPr)(NEtMe) 2
(Cp)Nb(═NC 5 H 11 )(NEt 2 ) 2
(Cp)Nb(═NC 5 H 11 )(NMe 2 ) 2 and
(Cp)Nb(═NC 5 H 11 )(NEtMe) 2 .