Display apparatus and method of manufacturing the same
A display apparatus includes a thin film transistor provided on a substrate and a pixel electrically coupled to the thin film transistor. The thin film transistor includes a semiconductor layer on the substrate, a first insulating layer on the semiconductor layer and having a first contact hole and a second contact hole, a source electrode on the first insulating layer and making contact with the semiconductor layer through the first contact hole, a drain electrode on the first insulating layer and making contact with the semiconductor layer through the second contact hole, a gate electrode between the source electrode and the drain electrode and having a stacked structure including a first conductive layer and a second conductive layer, and a second insulating layer between the source electrode and the drain electrode and covering the gate electrode.
1. A display apparatus comprising:
a substrate;
a thin film transistor on the substrate; and
a pixel electrically coupled to the thin film transistor,
wherein the thin film transistor comprises:
a semiconductor layer on the substrate;
a first insulating layer on the semiconductor layer and having a first contact hole and a second contact hole;
a source electrode on the first insulating layer and making contact with the semiconductor layer through the first contact hole;
a drain electrode on the first insulating layer and making contact with the semiconductor layer through the second contact hole;
a gate electrode between the source electrode and the drain electrode and having a stacked structure comprising a first conductive layer and a second conductive layer;
a second insulating layer between the source electrode and the drain electrode and covering the gate electrode; and
wherein bottoms of the gate electrode, the source electrode, and the drain electrode make contact with the first insulating layer.
2. The display apparatus as claimed in claim 1 , wherein the pixel comprises:
a first electrode on the first insulating layer and electrically coupled to the drain electrode;
an organic light emitting layer on the first electrode; and
a second electrode on the organic light emitting layer.
3. The display apparatus as claimed in claim 2 , wherein light emitted from the organic light emitting layer transmits through the substrate.
4. The display apparatus as claimed in claim 1 , wherein the first conductive layer comprises a transparent conductive material, and the second conductive layer comprises metal.
5. The display apparatus as claimed in claim 1 , wherein the second insulating layer surrounds lateral sides and an upper side of the gate electrode.
6. The display apparatus as claimed in claim 5 , wherein the second insulating layer is prevented from being overlapped with the source electrode and the drain electrode.
7. The display apparatus as claimed in claim 1 , wherein each of the source electrode and the drain electrode includes a plurality of overlapping conductive layers.
8. A display apparatus comprising:
a substrate;
a thin film transistor on the substrate; and
a pixel electrically coupled to the thin film transistor,
wherein the thin film transistor comprises:
a semiconductor layer on the substrate;
a first insulating layer on the semiconductor layer and having a first contact hole and a second contact hole;
a source electrode on the first insulating layer and making contact with the semiconductor layer through the first contact hole;
a drain electrode on the first insulating layer and making contact with the semiconductor layer through the second contact hole;
a gate electrode between the source electrode and the drain electrode and having a stacked structure comprising a first conductive layer and a second conductive layer; and
a second insulating layer between the source electrode and the drain electrode and covering the gate electrode,
wherein the pixel comprises:
a first electrode on the first insulating layer and electrically coupled to the drain electrode;
an organic light emitting layer on the first electrode; and
a second electrode on the organic light emitting layer,
wherein the first electrode comprises:
a third conductive layer; and
a fourth conductive layer on an end of the third conductive layer and making contact with the drain electrode, and
wherein the first conductive layer and the third conductive layer comprise the same material, and the second conductive layer and the fourth conductive layer comprise a material different than the material of the first conductive layer and the third conductive layer.
9. A display apparatus comprising:
a substrate;
a thin film transistor on the substrate; and
a pixel electrically coupled to the thin film transistor,
wherein the thin film transistor comprises:
a semiconductor layer on the substrate;
a first insulating layer on the semiconductor layer and having a first contact hole and a second contact hole;
a source electrode on the first insulating layer and making contact with the semiconductor layer through the first contact hole;
a drain electrode on the first insulating layer and making contact with the semiconductor layer through the second contact hole;
a gate electrode between the source electrode and the drain electrode and having a stacked structure comprising, a first conductive layer and a second conductive layer; and
a second insulating layer between the source electrode and the drain electrode and covering the gate electrode,
wherein the pixel comprises:
a first electrode on the first insulating layer and electrically coupled to the drain electrode:
an organic light emitting layer on the first electrode; and
a second electrode on the organic light emitting layer,
wherein bottoms of the first electrode, the gate electrode, the source electrode, and the drain electrode make contact with the first insulating layer and are spaced from each other on a surface of the first insulating layer.
10. A method of manufacturing a display apparatus, the method comprising:
forming a semiconductor layer in a thin film transistor region on a substrate;
forming a first insulating layer for covering the semiconductor layer;
forming a gate electrode overlapped with the semiconductor layer on the first insulating layer;
forming a first electrode in a pixel region on the substrate;
forming a first contact hole and a second contact hole in the first insulating layer for exposing the semiconductor layer;
forming a second insulating layer for covering the gate electrode on the first insulating layer;
forming a source electrode for making contact with the semiconductor layer through the first contact hole;
forming a drain electrode for making contact with the semiconductor layer through the second contact hole;
forming an organic light emitting layer on the first electrode; and
forming a second electrode on the organic light emitting layer,
wherein the source electrode and the drain electrode are separated by the second insulating layer, and
wherein bottoms of the gate electrode, the source electrode, and the drain electrode make contact with the first insulating layer.
11. The method as claimed in claim 10 , wherein the second insulating layer surrounds lateral sides and an upper side of the gate electrode.
12. The method as claimed in claim 11 , wherein the second insulating layer is prevented from being overlapped with the source electrode and the drain electrode.
13. The method as claimed in claim 10 , wherein each of the source electrode and the drain electrode comprises a plurality of overlapping conductive layers.
14. A method of manufacturing a display apparatus, the method comprising:
forming a semiconductor layer in a thin film transistor region on a substrate;
forming a first insulating layer for covering the semiconductor layer;
forming a gate electrode overlapped with the semiconductor layer on the first insulating layer;
forming a first electrode in a pixel region on the substrate;
forming a first contact hole and a second contact hole in the first insulating layer for exposing the semiconductor layer;
forming a second insulating layer for covering the gate electrode on the first insulating layer;
forming a source electrode for making contact with the semiconductor layer through the first contact hole;
forming a drain electrode for making contact with the semiconductor layer through the second contact hole;
forming an organic light emitting layer on the first electrode; and
forming a second electrode on the organic light emitting layer.,
wherein the source electrode and the drain electrode are separated by the second insulating laver,
wherein bottoms of the first electrode, the gate electrode, the source electrode, and the drain electrode make contact with the first insulating layer and are spaced apart from each other on a surface of the first insulating layer.
15. The method as claimed in claim 14 , wherein the forming of the gate electrode comprises:
forming a first reserved conductive layer on the first insulating layer;
forming a second reserved conductive layer on the first reserved conductive layer;
forming a first conductive layer in the thin film transistor region by patterning the first reserved conductive layer; and
forming a second conductive layer in the thin film transistor region by patterning the second reserved conductive layer, and
wherein the forming of the first electrode comprises:
forming a third conductive layer in the pixel region by patterning the first reserved conductive layer;
forming a reserved conductive pattern in the pixel region by patterning the second reserved conductive layer; and
forming a fourth conductive layer by removing a portion of the reserved conductive pattern corresponding to the pixel region.
16. The method as claimed in claim 15 , wherein the first conductive layer comprises a transparent conductive material, the second conductive layer comprises metal, the first conductive layer and the third conductive layer comprise a same material, and the second conductive layer and the fourth conductive layer comprise a material different from the material of the first conductive layer and the third conductive layer.