Semiconductor light emitting device
According to one embodiment, a semiconductor light emitting device includes a stacked structural body, a first electrode, and a second electrode. The stacked structural body includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting portion. The stacked structural body has a first major surface on a side of the second semiconductor layer. The first electrode is provided on the first semiconductor. The second electrode is provided on the second semiconductor layer. The first electrode includes a first pad portion and a first extending portion that extends from the first pad portion along a first extending direction. The first extending portion includes a first width-increasing portion. A width of the first width-increasing portion along a direction orthogonal to the first extending direction is increased from the first pad portion toward an end of the first extending portion.
1. A semiconductor light emitting device comprising:
a stacked structural body including:
a first semiconductor layer of a first conductivity type, the first semiconductor layer having a major face, a first portion provided on the major face and a second portion provided on the major face;
a second semiconductor layer of a second conductivity type, the second semiconductor layer provided on the first portion; and
a light emitting portion provided between the first portion of the first semiconductor layer and the second semiconductor layer;
a first electrode provided on the second portion of the first semiconductor layer; and
a second electrode provided on the second semiconductor layer,
the first electrode including:
a first pad portion; and
a first extending portion extending from the first pad portion along a first extending direction;
the first extending portion including a first width-increasing portion, a width of the first width-increasing portion along a direction orthogonal to the first extending direction being increased from the first pad portion toward an end of the first extending portion;
wherein
the second electrode includes:
a second pad portion;
a second extending portion extending from the second pad portion, at least a part of the second extending portion extending along a second extending direction; and
a third extending portion extending from the second pad portion, at least a part of the third extending portion extending along a third extending direction different from the second extending direction;
wherein
the first conductivity type is n-type,
the second conductivity type is p-type,
the second extending portion and the third extending portion extend from a position of the second pad portion which is receded from a position which is closest to the first extending portion,
the width of the first width-increasing portion along a direction orthogonal to the first extending direction gradually increases from a start position toward an end position, the start position being on a side of the first pad from a center position along the first extending direction in the first extending portion, and the end position being an end of the first extending portion.
2. The device according to claim 1 , wherein
a distance between the first pad portion and an end portion of the second electrode closest to the first pad portion is less than a distance between the first pad portion and a center of the first extending portion along the first extending direction.
3. The device according to claim 1 , wherein
the width of the first width-increasing portion is increased continuously.
4. The device according to claim 1 , wherein
the width of the first width-increasing portion is increased in a stepwise manner.
5. The device according to claim 1 , wherein
the third extending direction is opposite to the second extending direction.
6. The device according to claim 1 , wherein the second extending portion is curved midway, and the third extending portion is curved midway.