IP Library › Granted Patent US 8,463,089
Granted Patent B2
US 8,463,089 · App. 13/318,638 · Granted Jun 11, 2013

Semiconductor optical modulation device

Inventor: Norio Okada (Tokyo, JP)
Assignee: Mitsubishi Electric Corporation
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Quick Facts
Patent No.
US 8,463,089
App. No.
13/318,638
Granted
Jun 11, 2013
Kind
B2
Abstract

A temperature control module and a support block are mounted on a metal stem. A dielectric substrate is mounted on a side surface of the support block. A support block is mounted on a cooling surface of the temperature control module. A dielectric substrate is mounted on a side surface of the support block. A semiconductor optical modulation element is mounted on the dielectric substrate. A lead pin and a signal line are connected through a bonding wire. The signal line and a signal conductor are connected through a bonding wire. The signal conductor and the semiconductor optical modulation element are connected through a bonding wire.

Claims (36)

1. A semiconductor optical modulation device comprising:

a metal stem;

a lead pin that penetrates through the metal stem;

a first support block that is mounted on the metal stem;

a temperature control module that is mounted on the metal stem;

a first dielectric substrate that is mounted on a side surface of the first support block;

a second support block that is mounted on the temperature control module;

a signal line that is formed on the first dielectric substrate;

a second dielectric substrate that is mounted on a side surface of the second support block;

a signal conductor that is formed on the second dielectric substrate;

a semiconductor optical modulation element that is mounted on the second dielectric substrate;

a first bonding wire that connects the lead pin to an end of the signal line;

a second bonding wire that connects the other end of the signal line to an end of the signal conductor; and

a third bonding wire that connects another end of the signal conductor to the semiconductor optical modulation element.

2. The semiconductor optical modulation device according to claim 1 , wherein the first support block supports both ends of the first dielectric substrate.

3. The semiconductor optical modulation device according to claim 1 , further comprising a ground conductor that is formed on the first dielectric substrate with a constant distance to the signal line.

4. The semiconductor optical modulation device according to claim 3 , further comprising a resistor that is formed on the first dielectric substrate and connects the signal line to the ground line.

5. The semiconductor optical modulation device according to claim 1 , wherein the metal stem has a rectangular shape.

6. The semiconductor optical modulation device according to claim 1 , further comprising a heat radiation block that is attached to a back side of the metal stem.

7. A semiconductor optical modulation device comprising:

a metal stem;

a lead pin that penetrates through the metal stem;

a first dielectric substrate that is mounted on the metal stem via a side surface thereof;

a temperature control module that is mounted on the metal stem;

a support block that is mounted on the temperature control module;

a signal line that is formed on the first dielectric substrate;

a second dielectric substrate that is mounted on a side surface of the support block;

a signal conductor that is formed on the second dielectric substrate;

a semiconductor optical modulation element that is mounted on the second dielectric substrate;

a first bonding wire that connects the lead pin to an end of the signal line;

a second bonding wire that connects the other end of the signal line to an end of the signal conductor; and

a third bonding wire that connects another end of the signal conductor to the semiconductor optical modulation element.

8. The semiconductor optical modulation device according to claim 7 , further comprising a ground conductor that is formed on the first dielectric substrate with a constant distance to the signal line.

9. The semiconductor optical modulation device according to claim 8 , further comprising a resistor that is formed on the first dielectric substrate and connects the signal line to the ground line.

10. The semiconductor optical modulation device according to claim 7 , wherein the metal stem has a rectangular shape.

11. The semiconductor optical modulation device according to claim 7 , further comprising a heat radiation block that is attached to a back side of the metal stem.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 3, 2011
From: OKADA, NORIO
To: MITSUBISHI ELECTRIC CORPORATION
Reel/Frame 027167/0573 →
Priority Claims (1)
JP 2009-133372 · Jun 2, 2009 · national
Continuity (1)
Related Publication 20120045161A1 · Feb 23, 2012