Thin film transistor and method of fabricating the same
A thin film transistor (TFT) including a gate electrode, an active layer, and source and drain electrodes. The active layer includes contact regions that contact the source and drain electrodes, which are thinner than a remaining region of the active layer. The contact regions reduce the contact resistance between the active material layer and the source and drain electrodes.
1. A thin film transistor (TFT) comprising:
a gate electrode;
an active layer overlapping the gate electrode, having contact regions that have a consistent thickness, and a remaining region that is thicker than the contact regions;
an etch stop layer covering the remaining region and exposing the contact regions; and
source and drain electrodes contacting the contact regions and directly contacting opposing surfaces of the remaining region.
2. The thin film transistor as claimed in claim 1 , wherein the thickness of the contact regions is from about 10% to 90% of the thickness of the remaining region.
3. The thin film transistor as claimed in claim 1 , wherein the active layer comprises an oxide semiconductor.
4. The thin film transistor as claimed in claim 3 , wherein the active layer comprises an amorphous oxide having an electron carrier density of less than about 10 18 /cm 3 .
5. The thin film transistor as claimed in claim 4 , wherein the amorphous oxide comprises at least one selected from the group consisting of: an oxide comprising In, Zn, and Sn; an oxide comprising In, Zn, and Ga; or an oxide comprising at least one selected from the group consisting of Li, Na, Mn, Ni, Pd, Cu, Cd, C, N, P, Ti, Zr, Hf, V, Ru, Ge, Sn, and F.
6. The thin film transistor as claimed in claim 1 , wherein the TFT has a bottom gate structure.
7. The thin film transistor as claimed in claim 6 , wherein the source and drain electrodes directly contact the contact regions of the active layer.
8. The thin film transistor as claimed in claim 1 , further comprising an interface stabilizing layer formed under the active layer, comprising an oxide having a band gap greater than, or equal to, the band gap of the active layer.