Injection locked frequency divider and PLL circuit
An injection locked frequency divider and a PLL circuit, having a wide operating frequency bandwidth and capable of reducing the influence of any parasitic capacitance, are provided. Injection locked frequency divider ( 100 ) includes ring oscillator 140 that cascade-connects first amplifier circuit ( 141 ) including N-channel MOS transistor ( 111 ) and P-channel MOS transistor ( 112 ), and second amplifier circuit 142 and third amplifier circuit ( 143 ) that have the same configuration as first amplifier circuit ( 141 ) in three stages in a ring; N-channel MOS transistor 150 in which the sources of N-channel MOS transistors ( 111, 121, 131 ) in the respective stages are connected to the drain thereof; and differential signal injection circuit ( 160 ) that injects injection signal I 1 to the gates of P-channel MOS transistors ( 112, 122, 132 ) in the respective stages and injects a reverse phase signal of injection signal I 1 as a differential signal to the gate of N-channel MOS transistor ( 150 ).
1. An injection locked frequency divider comprising:
a ring oscillator that cascade-connects amplifier circuits each including an N-channel metal oxide semiconductor transistor and a P-channel metal oxide semiconductor transistor in (2n+1) (n is any natural number) stages in a ring;
an electric current source that is connected to the ring oscillator and includes an N-channel metal oxide semiconductor transistor that drives the ring oscillator; and
a differential signal injection circuit that outputs an injection signal to the ring oscillator and outputs a reverse phase signal of the injection signal as a differential signal to the electric current source, wherein:
the drain of the N-channel metal oxide semiconductor transistor of the electric current source is connected to the source of the N-channel metal oxide semiconductor transistor of the ring oscillator; and
the differential signal injection circuit outputs the injection signal to the gate of the P-channel metal oxide semiconductor transistor of the ring oscillator and outputs the differential signal to the gate of the N-channel metal oxide semiconductor transistor of the electric current source.
2. The injection locked frequency divider according to claim 1 , wherein an output stage of the ring oscillator superimposes a signal amplified based on the injection signal on a signal amplified based on the differential signal in phase for output.
3. The injection locked frequency divider according to claim 1 , wherein the differential signal injection circuit injects a signal having a frequency m (2n+1) (m is any natural number) times oscillation signal of the ring oscillator.
4. A phase locked loop circuit that performs a frequency negative feedback operation, comprising:
a reference signal oscillator that outputs a reference signal;
a voltage controlled oscillator that outputs a high frequency signal;
an injection locked frequency divider that frequency-divides the high frequency signal;
a phase frequency detector that compares an frequency division signal of the injection locked frequency divider with an output signal of the reference signal oscillator and outputs a phase-frequency error;
a charge pump that converts the phase-frequency error detected by the phase frequency detector to an electric current; and
a loop filter that generates a control voltage of the voltage controlled oscillator and outputs a generated control voltage to the voltage controlled oscillator, wherein the control voltage controls the voltage controlled oscillator so that the error detected by the phase frequency detector can become smaller, the phase locked loop circuit,
wherein the injection locked frequency divider is the injection locked frequency divider according to claim 1 .