Non-volatile memory device with program current clamp and related method

1. A method of programming a nonvolatile memory cell which comprises a select transistor and a memory transistor, the method comprising:

applying a bias voltage to a first input of the memory cell;

applying a preset limit current to a current limiting circuit electrically connected to a second input of the memory cell;

applying a first ramped gate voltage to the memory cell to program the memory cell with a preset limited current determined by the current limiting circuit, the first ramped gate voltage climbing to a first voltage;

performing a verification process on the memory cell; and

when the verification process on the memory cell fails, applying a second ramped gate voltage to the memory cell to program the memory cell with the preset limited current determined by the current limiting circuit, the second ramped gate voltage being higher than the first voltage.

2. The method of claim 1 , wherein the first input is the source line, and the second input is the bit line.

3. The method of claim 1 , wherein the first input is the bit line, and the second input is the source line.

4. The method of claim 1 , wherein applying the first or the second ramped gate voltage to the memory cell to program the memory cell with the preset limited current determined by the current limiting circuit comprises:

controlling source-line-to-bit-line bias of the memory cell by feedback of the current limiting circuit to the bit line and stabilization by the preset limit current.

5. The method of claim 1 , wherein applying the first or the second ramped gate voltage to the memory cell to program the memory cell with the preset limited current determined by the current limiting circuit comprises:

controlling source-line-to-bit-line bias of the memory cell by feedback of the current limiting circuit to the source line and stabilization by the preset limit current.

6. A nonvolatile memory device comprising:

a select transistor having a first terminal, a second terminal and a gate terminal;

a memory transistor having a third terminal coupled to the second terminal of the select transistor, a fourth terminal and a control terminal configured to receive a first ramped gate voltage for inducing a program current to program the memory transistor, a verification voltage for verifying programming of the memory cell, and when verification fails, a second ramped gate voltage higher than the first ramped gate voltage for inducing the program current to program the memory transistor; and

a current limiting circuit for controlling a voltage drop across the first terminal of the select transistor and the fourth terminal of the memory transistor for limiting the program current.

7. The nonvolatile memory device of claim 6 , wherein the current limiting circuit is electrically connected to the first terminal of the select transistor.

8. The nonvolatile memory device of claim 6 , wherein the current limiting circuit is electrically connected to the fourth terminal of the memory transistor.

9. The nonvolatile memory device of claim 6 , wherein the current limiting circuit comprises an input terminal for sensing the program current, and an output terminal for controlling the voltage drop according to the sensed program current.

10. The nonvolatile memory device of claim 9 , wherein the output terminal of the current limiting circuit is electrically connected to the fourth terminal of the memory transistor.

11. The nonvolatile memory device of claim 9 , wherein the output terminal of the current limiting circuit is electrically connected to the first terminal of the select transistor.