Use of group V metal containing precursors for a process of depositing a metal containing film
The disclosure is directed to a process for depositing a group V metal containing film on a substrate by introducing a substrate into a reactor; preferably heating the substrate at a temperature above 150° C.; feeding a compound of the formula (Ia) or of the formula (Ib), or a mixture of said compounds thereof in the vapor phase into the reactor; optionally feeding a second compound of the formula (Ia) or of the formula (Ib), or a second mixture of said compounds thereof in vapor phase into the reactor; and thereby depositing the group V metal containing film onto said substrate.
1. A process for depositing a group V metal containing film on a substrate comprising the steps of:
introducing a substrate into a reactor;
feeding a compound of the formula (Ia) or of the formula (Ib), or a mixture of said compounds thereof in the vapor phase into the reactor;
wherein:
M is a group V metal selected from Tantalum (Ta), Niobium (Nb) and Vanadium (V);
R 1 , R 2 , R 3 , R 4 , R 5 , R 6 and R 7 ; which may be identical or different, are independently chosen from Hydrogen atom, linear or branched alkyl groups having from one to four carbon atoms, linear or branched alkoxy groups having from one to four carbon atoms, linear or branched alkylamide groups having from one to four carbon atoms, linear or branched alkylsilylamide groups having from one to four carbon atoms;
either R′ 1 , R′ 2 , R′ 3 and R′ 4 ; which may be identical or different, are independently chosen from Hydrogen atom, linear or branched alkyl groups having from one to four carbon atoms, linear or branched alkoxy groups having from one to four carbon atoms, linear or branched alkylamide groups having from one to four carbon atoms or linear or branched alkylsilylamide groups having from one to four carbon atoms;
or and R′ 4 together represent an oxo group (═O) or alkyl imino group having from one to four carbon atoms (═N—R);
depositing the group V metal containing film onto said substrate.
2. The process of claim 1 , further comprising the step of injecting into the reactor a reactant selected from the group consisting of NH 3 , N 2 H 4 , methylhydrazine and any mixture thereof, wherein the group V metal containing film is TaN.
3. The process of claim 1 , further comprising the step of feeding into the reactor a Si containing precursor, wherein the group V metal containing film is TaSi.
4. The process of claim 3 , wherein the Si containing precursors is SiH 4 .
5. The process of claim 1 , further comprising the step of feeding into the reactor a Si containing precursor and a reactant, wherein the group V metal containing film is TaSiN.
6. The process of claim 5 , wherein the Si containing precursor is trisilylamine or TriDMAS and the reactant is NH 3 .
7. The process of claim 1 , further comprising the step of injecting into the reactor an oxygen comprising reactant, wherein the group V metal containing film is TaO.
8. The process of claim 7 , wherein the oxygen comprising reactant is O 3 .
9. The process of claim 1 , further comprising the step of injecting into the reactor an oxygen comprising reactant and a Hafnium containing precursor, wherein the group V metal containing film is TaHfO.
10. The process of claim 9 , wherein the hafnium containing precursor is TEMAHf.
11. The process of claim 1 , wherein the group V metal containing film is TaC, further comprising the step of injecting the compound alone or additionally injecting a carbon precursor when more than about 30% vol. of carbon is needed in the group V metal containing film.
12. The process of claim 11 , wherein the carbon precursor is C 2 H 4 .
13. The process of claim 1 , wherein R 1 , R 2 , R 3 , R 4 , R 5 , R 6 and R 7 , which may be identical or different, are independently chosen from Hydrogen atom or linear or branched alkyl groups having from one to four carbon atoms.
14. The process of claim 1 , wherein R′ 1 , R′ 2 , R′ 3 , and R′ 4 , which may be identical or different, are independently chosen from Hydrogen atom or linear or branched alkyl groups having from one to four carbon atoms.
15. The process of claim 1 , wherein R 2 , R 3 , R 4 , and R 5 , each represent a Hydrogen atom.
16. The process of claim 1 , wherein R 2 , R 3 , R 4 , R 5 , R 6 and R 7 , each represent a Hydrogen atom.
17. The process of claim 1 , wherein R 1 is chosen from ethyl, isopropyl or tert-butyl.
18. The process of claim 1 , wherein R′ 1 , R′ 2 , R′ 3 , and R′ 4 each represent a methyl group.
19. The process of claim 1 , wherein R′ 1 and R′ 2 , which may be identical or different, are independently chosen from methyl or methoxy, and R′ 3 and R′ 4 together represent an oxo group (═O) or a tert-butyl imino group (=N-tBu).
20. The process of claim 1 , wherein the compound comprises at least one member selected from the group consisting of:
(Isopropyl-Cyclopentadienyl) tetrakis(methyl) Tantalum;
(1,5-diisopropyl-pentadienyl) tetrakis(methyl) Tantalum;
(1,3-di-tert-butyl-cyclopentadienyl) tetrakis(methyl) Tantalum;
(Ethyl-cyclopentadienyl) tetrakis(methyl) Tantalum;
(Isopropyl-Cyclopentadienyl) tetrakis(methyl) Vanadium;
(Isopropyl-Cyclopentadienyl) tetrakis(methyl) Niobium; and
(1,3-di-tert-butyl-cyclopentadienyl) tetrakis(methyl) Niobium.
21. The process of claim 1 , further comprising a step of heating the substrate at a temperature above 150° C.
22. The process of claim 1 , further comprising a step of feeding a second compound of the formula (Ia) or of the formula (Ib), or a second mixture of said compounds thereof in vapor phase into the reactor.