Solid-state imaging device and camera
Disclosed is a solid-state imaging device which includes a plurality of pixels in an arrangement, each of the pixels including a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region, in which the channel width of transfer gate of the transfer transistor is formed to be larger on a side of the floating diffusion region than on a side of the photoelectric conversion element.
1. A solid-state imaging device, comprising a plurality of pixels in an arrangement, wherein:
each of the pixels includes a photoelectric conversion element, pixel transistors including a transfer transistor, and a floating diffusion region,
with respect to each pixel, a channel width of a transfer gate of the transfer transistor is larger at a side facing the floating diffusion region than at a side facing the photoelectric conversion element,
with respect to each pixel, the transfer gate has a rectangular transfer gate electrode and a trapezoidal channel region, the channel width of the channel region of the transfer gate increases from the side facing the photoelectric conversion element to the side facing the floating diffusion region;
wherein the floating diffusion region is shared with a plurality of photoelectric conversion elements; and
wherein the floating diffusion region is shared by four photoelectric conversion elements as the plurality of photoelectric conversion elements.
2. A solid-state imaging device according to claim 1 , wherein:
a portion of the floating diffusion region in contact with the transfer gate are formed as a high impurity concentration region, and
other portions of the floating diffusion region around the high concentration region and between the high impurity concentration region and a device isolation region are formed as a region having an impurity concentration lower than the high concentration region.
3. A solid-state imaging device according to claim 2 , wherein the high impurity concentration region in the floating diffusion region is used as a contact region.
4. A solid-state imaging device according to claim 3 , wherein the pixel transistors other than the transfer transistor are shared in a set with a plurality of photoelectric conversion elements and a plurality of transfer transistors configured to readout signal charges output from the plurality of photoelectric conversion elements.
5. A solid-state imaging device according to claim 4 , wherein the plurality of photoelectric conversion elements are arranged horizontally and vertically in an orthogonal coordinate array.
6. A solid-state imaging device according to claim 4 , wherein the plurality of photoelectric conversion elements are arranged in an orthogonal coordinate array with two orthogonal axes thereof inclined with respect to horizontal and vertical directions, respectively.
7. A solid-state imaging device according to claim 1 , wherein:
a portion of the floating diffusion region in contact with the transfer gate is formed as a high impurity concentration region, and
other portions of the floating diffusion region around the high concentration region and between the high impurity concentration region and a device isolation region is formed as a region having an impurity concentration lower than the high concentration region.
8. A solid-state imaging device according to claim 7 , wherein the high impurity concentration region in the floating diffusion region is used as a contact region.
9. A solid-state imaging device according to claim 1 , wherein the pixel transistors other than the transfer transistor are shared in a set with a plurality of photoelectric conversion elements and a plurality of transfer transistors configured to readout signal charges output from the plurality of photoelectric conversion elements.
10. A solid-state imaging device according to claim 1 , wherein the plurality of photoelectric conversion elements are arranged horizontally and vertically in an orthogonal coordinate array.
11. A solid-state imaging device according to claim 1 , wherein the plurality of photoelectric conversion elements are arranged in an orthogonal coordinate array with two orthogonal axes thereof inclined with respect to horizontal and vertical directions, respectively.