Semiconductor laser silicon waveguide substrate, and integrated device
A semiconductor laser includes: a first portion, made from a silicon-containing material, including an optical waveguide, a first diffraction grating including a phase shift, and a second diffraction grating; a second portion including a light-emitting layer made from a material different from that of the first portion; a laser region including the first diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the first diffraction grating; and a mirror region including the second diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the second diffraction grating.
1. A semiconductor laser comprising:
a first portion, made from a silicon-containing material, including an optical waveguide, a first diffraction grating having a phase shift, and a second diffraction grating;
a second portion including a light-emitting layer made from a material different from that of the first portion;
a laser region defined from the first diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the first diffraction grating; and
a mirror region defined from the second diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the second diffraction grating,
wherein the first diffraction grating and the second diffraction grating are continuously provided along the optical waveguide, and
the second portion covers a whole of the first diffraction grating and the second diffraction grating and extends outward a distance further than the first diffraction grating and the second diffraction grating.
2. The semiconductor laser according to claim 1 , wherein the laser region is adapted to induce current injection into the light-emitting layer, while the mirror region is adapted not to induce current injection into the light-emitting layer.
3. The semiconductor laser according to claim 1 , wherein the laser region includes an electrode for current injection, while the mirror region includes no electrode for current injection.
4. The semiconductor laser according to claim 1 , wherein the laser region and the mirror region includes respective electrodes, and the mirror region includes a higher-resistance region between the corresponding electrode and the light-emitting layer.
5. The semiconductor laser according to claim 1 , wherein the first portion and the second portion are bonded together.
6. The semiconductor laser according to claim 1 , wherein the light-emitting layer is provided where light propagating through the optical waveguide can evanescently couple.
7. The semiconductor laser according to claim 1 , wherein the light-emitting layer is a group III-V semiconductor layer made from a group III-V semiconductor material.
8. The semiconductor laser according to claim 1 , wherein the optical waveguide includes a rib-structure waveguide core, and the first diffraction grating and the second diffraction grating are formed on sides of the rib-structure waveguide core.
9. The semiconductor laser according to claim 1 , wherein the second diffraction grating has a coupling coefficient larger than a coupling coefficient of the first diffraction grating.
10. The semiconductor laser according to claim 1 , wherein both end faces of the light-emitting layer are each inclined the with respect to a direction perpendicular to the optical waveguide.
11. The semiconductor laser according to claim 1 , wherein the second diffraction grating is provided at one side of the direction along the optical waveguide, and an end face on the other side of the direction along the optical waveguide of the light-emitting layer is inclined with respect to a direction perpendicular to the optical waveguide.
12. The semiconductor laser according to claim 1 , wherein the optical waveguide includes a waveguide core, and the laser region includes an electrode and higher-resistance regions provided on opposite sides of a region between the electrode and the waveguide core.
13. The semiconductor laser according to claim 1 , wherein the first portion comprises
a silicon substrate;
a silicon oxide film formed over the silicon substrate; and
a silicon layer, formed over the silicon oxide film, including a rib-structure waveguide core constructing the optical waveguide,
wherein the first diffraction grating and the second diffraction grating are formed on sides of the rib-structure waveguide core.
14. The semiconductor laser according to claim 1 , wherein the first portion and the second portion are bonded together, sandwiching a semiconductor layer, the semiconductor layer extending outwardly from both sides of the second portion, and the semiconductor laser further includes electrodes over the semiconductor layer provided on opposite sides of the second portion.
15. A semiconductor laser comprising:
a first portion, made from a silicon-containing material, including an optical waveguide, a first diffraction grating having a phase shift, and a second diffraction grating; and
a second portion including a light-emitting layer made from a material different from that of the first portion and provided where light propagating through the optical waveguide can evanescently couple,
wherein the first diffraction grating and the second diffraction grating are continuously provided along the optical waveguide, and
the second portion covers a whole of the first diffraction grating and the second diffraction grating and extends outward a distance further than the first diffraction grating and the second diffraction grating.
16. The semiconductor laser according to claim 15 , wherein the optical waveguide includes a rib-structure waveguide core, and the first diffraction grating and the second diffraction grating are formed on sides of the rib-structure waveguide core.
17. The semiconductor laser according to claim 15 , wherein the second diffraction grating has a coupling coefficient larger than a coupling coefficient of the first diffraction grating.
18. An integrated device comprising:
a semiconductor laser including:
a first portion, made from a silicon-containing material, including an optical waveguide, a first diffraction grating having a phase shift, and a second diffraction grating;
a second portion including a light-emitting layer made from a material different from that of the first portion;
a laser region defined from the first diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the first diffraction grating; and
a mirror region defined from the second diffraction grating, and the optical waveguide and the light-emitting layer provided in a position corresponding to the second diffraction grating; and
a functional device,
wherein the semiconductor laser and the functional device are integrated on a single silicon substrate,
the first diffraction grating and the second diffraction grating are continuously provided along the optical waveguide, and
the second portion covers a whole of the first diffraction grating and the second diffraction grating and extends outward a distance further than the first diffraction grating and the second diffraction grating.