Integrated semiconductor optical device
An integrated semiconductor optical device includes first and second semiconductor optical devices. The first semiconductor optical device includes a first core layer, a first upper cladding layer including a first ridge portion, a first buried layer surrounding the first ridge portion, and a first adjusting layer provided between the first buried layer and the first ridge portion. The second semiconductor optical device includes a second core layer, a second upper cladding layer including a second ridge portion. The first semiconductor optical device and the second semiconductor optical device are arranged next to each other in a predetermined axis direction. The first core layer is joined to the second core layer by a butt joint method at a joint boundary between the first and second semiconductor optical devices. The first adjusting layer has a refractive index lower than a refractive index of the first core layer and higher than a refractive index of the first buried layer. The first adjusting layer extends in the predetermined axis direction. The first adjusting layer has a constant width from one end facet to the joint boundary.
1. An integrated semiconductor optical device comprising:
a semiconductor substrate that includes a main surface including first and second areas, the first and second areas being arranged next to each other in a predetermined direction;
a first semiconductor optical device including a first mesa portion extending in the predetermined direction, a first buried layer surrounding the first mesa portion, and a first adjusting layer provided between the first mesa portion and the first buried layer, the first buried layer containing an insulating material, and the first mesa portion including a first region of a first cladding layer provided on the first area, a first core layer provided on the first region of the first cladding layer, and a first region of a second cladding layer provided on the first core layer; and
a second semiconductor optical device including a second mesa portion extending in the predetermined direction, the second mesa portion having a width different from a width of the first mesa portion, the second mesa portion including a second region of the first cladding layer provided on the second area, a second core layer provided on the second region of the first cladding layer, and a second region of the second cladding layer provided on the second core layer,
wherein the first core layer is joined to the second core layer by a butt joint,
the first adjusting layer extends from one end facet to another end facet of the first semiconductor optical device in the predetermined direction, and
the first adjusting layer has a refractive index lower than a refractive index of the first core layer and higher than a refractive index of the first buried layer.
2. The integrated semiconductor optical device according to claim 1 , wherein the first adjusting layer has a constant width from the one end facet to the other end facet of the first semiconductor optical device.
3. The integrated semiconductor optical device according to claim 1 , wherein the first adjusting layer is in contact with a side surface of the first core layer.
4. The integrated semiconductor optical device according to claim 1 , wherein
the first cladding layer, the first core layer, the second core layer, and the second cladding layer contain semiconductor materials.
5. The integrated semiconductor optical device according to claim 1 , wherein
the first semiconductor optical device includes a first optical waveguide including the first region of the first cladding layer, the first core layer, and the first region of the second cladding layer,
the second semiconductor optical device includes a second optical waveguide including the second region of the first cladding layer, the second core layer, and the second region of the second cladding layer, and
an effective refractive index of the first optical waveguide is substantially equal to an effective refractive index of the second optical waveguide.
6. The integrated semiconductor optical device according to claim 1 , wherein the first adjusting layer contains a material selected from titanium oxide, tantalum oxide, zirconium oxide, and amorphous silicon.
7. The integrated semiconductor optical device according to claim 1 , wherein the first adjusting layer contains a semiconductor material selected from InP, GaInAsP, GaInAs, AlGaInAs, and AlInAs.
8. The integrated semiconductor optical device according to claim 1 , wherein the first buried layer contains a polyimide resin or a benzocyclobutene resin.
9. The integrated semiconductor optical device according to claim 1 , wherein
the second semiconductor optical device further includes a second adjusting layer and a second buried layer surrounding the second mesa portion,
the second adjusting layer is provided between the second mesa portion and the second buried layer,
the second adjusting layer extends from one end facet to another end facet of the second semiconductor optical device in the predetermined direction, and
a refractive index of the second adjusting layer is lower than a refractive index of the second core layer and higher than the refractive index of the second buried layer.
10. The integrated semiconductor optical device according to claim 9 , wherein the second adjusting layer has a constant width from the one end facet to the other end facet of the second semiconductor optical device.
11. The integrated semiconductor optical device according to claim 9 , wherein the second adjusting layer is in contact with a side surface of the second core layer in the second mesa portion.
12. The integrated semiconductor optical device according to claim 1 , wherein
the first semiconductor optical device further includes a third adjusting layer sandwiched between the first adjusting layer and the first buried layer, and
a refractive index of the third adjusting layer is lower than the refractive index of the first adjusting layer and higher than the refractive index of the first buried layer.
13. The integrated semiconductor optical device according to claim 1 , wherein
the second semiconductor optical device further includes a second adjusting layer, a fourth adjusting layer, and a second buried layer surrounding the second mesa portion,
the second adjusting layer is provided between the second mesa portion and the second buried layer,
the second adjusting layer extends from one end facet to another end facet of the second semiconductor optical device in the predetermined direction,
the second adjusting layer is in contact with a side surface of the second core layer in the second mesa portion,
the second adjusting layer has a refractive index lower than a refractive index of the second core layer and higher than the refractive index of the second buried layer,
the fourth adjusting layer is provided between the second adjusting layer and the second buried layer, and
the fourth adjusting layer has a refractive index lower than the refractive index of the second adjusting layer and higher than the refractive index of the second buried layer.
14. The integrated semiconductor optical device according to claim 13 , wherein the second adjusting layer and the fourth adjusting layer have constant widths from the one end facet to the other end facet of the second semiconductor optical device.
15. The integrated semiconductor optical device according to claim 1 , wherein the first semiconductor optical device is a light emitting device, and the second semiconductor optical device is an electro-absorption optical modulator.
16. An integrated semiconductor optical device comprising:
a semiconductor substrate that includes a main surface including first and second areas, the first and second areas being arranged next to each other in a predetermined direction;
a first semiconductor optical device including a first mesa portion extending in the predetermined direction, a first buried layer surrounding the first mesa portion, a first adjusting layer provided between the first mesa portion and the first buried layer, and another adjusting layer sandwiched between the first adjusting layer and the first buried layer, the first mesa portion including a first region of a first cladding layer provided on the first area, a first core layer provided on the first region of the first cladding layer, and a first region of a second cladding layer provided on the first core layer; and
a second semiconductor optical device including a second mesa portion extending in the predetermined direction, the second mesa portion having a width different from a width of the first mesa portion, the second mesa portion including a second region of the first cladding layer provided on the second area, a second core layer provided on the second region of the first cladding layer, and a second region of the second cladding layer provided on the second core layer,
wherein the first core layer is joined to the second core layer by a butt joint,
the first adjusting layer extends from one end facet to another end facet of the first semiconductor optical device in the predetermined direction,
the first adjusting layer has a refractive index lower than a refractive index of the first core layer and higher than a refractive index of the first buried layer, and
the another adjusting layer has a refractive index that is lower than the refractive index of the first adjusting layer and higher than the refractive index of the first buried layer.
17. The integrated semiconductor optical device according to claim 16 , wherein the another adjusting layer has a constant width from the one end facet to the other end facet of the first semiconductor optical device.
18. The integrated semiconductor optical device according to claim 16 , wherein
the another adjusting layer is a third adjusting layer,
the second semiconductor optical device further includes a second adjusting layer, a fourth adjusting layer, and a second buried layer surrounding the second mesa portion,
the second adjusting layer is provided between the second mesa portion and the second buried layer,
the second adjusting layer extends from one end facet to another end facet of the second semiconductor optical device in the predetermined direction,
the second adjusting layer is in contact with a side surface of the second core layer in the second mesa portion,
the second adjusting layer has a refractive index lower than a refractive index of the second core layer and higher than the refractive index of the second buried layer,
the fourth adjusting layer is provided between the second adjusting layer and the second buried layer, and
the fourth adjusting layer has a refractive index lower than the refractive index of the second adjusting layer and higher than the refractive index of the second buried layer.
19. The integrated semiconductor optical device according to claim 18 , wherein the second adjusting layer and the fourth adjusting layer have constant widths from the one end facet to the other end facet of the second semiconductor optical device.