Off-chip VIAS in stacked chips
A microelectronic assembly includes first and second stacked microelectronic elements, each having spaced apart traces extending along a front face and beyond at least a first edge thereof. An insulating region can contact the edges of each microelectronic element and at least portions of the traces of each microelectronic element extending beyond the respective first edges. The insulating region can define first and second side surfaces adjacent the first and second edges of the microelectronic elements. A plurality of spaced apart openings can extend along a side surface of the microelectronic assembly. Electrical conductors connected with respective traces can have portions disposed in respective openings and extending along the respective openings. The electrical conductors may extend to pads or solder balls overlying a face of one of the microelectronic elements.
1. An in-process microelectronic assembly comprising:
a first substrate;
a first microelectronic element comprising a front face bonded to said first substrate and an opposing rear face; said first microelectronic element further comprising a plurality of first traces extending along said front face, at least a portion of each said first trace extending beyond a first edge of said first microelectronic element, said first microelectronic element further comprising a second edge opposite said first edge;
a second microelectronic element comprising a front face facing said opposing rear face of said first microelectronic element, said second microelectronic element further comprising a plurality of second traces extending along said front face of said second microelectronic element, at least a portion of each said second trace extending beyond a first edge of said second microelectronic element, said second microelectronic element further comprising a second edge opposite said first edge of said second microelectronic element;
a third microelectronic element comprising a front face bonded to said first substrate and an opposing rear face; said third microelectronic element further comprising a plurality of third traces extending along said front face, at least a portion of each said third trace extending beyond a first edge of said third microelectronic element, said third microelectronic element further comprising a second edge opposite said first edge of said third microelectronic element, said third microelectronic element being adjacent to said first microelectronic element;
a fourth microelectronic element comprising a front face facing said opposing rear face of said third microelectronic element, said fourth microelectronic element further comprising a plurality of fourth traces extending along said front face of said fourth microelectronic element, at least a portion of each said fourth trace extending beyond a first edge of said fourth microelectronic element, said fourth microelectronic element further comprising a second edge opposite said first edge of said fourth microelectronic element;
a first insulating region disposed around respective said first and second edges of said first and third microelectronic elements;
a second insulating region disposed around respective said first and second edges of said second and fourth microelectronic elements, said first and second insulating regions defining at least (i) first and second side external surfaces adjacent the first and second edges of each of the first and second microelectronic elements and (ii) third and fourth side external surfaces adjacent the third and fourth edges of each of the third and fourth microelectronic elements; and
at least one electrical conductor disposed on at least one of said first, second, third, and fourth side external surfaces of said microelectronic assembly, said electrical conductor being in electrical contact with a cross-sectional edge of at least one of said plurality of said first, second, third, and fourth traces.
2. The microelectronic assembly of claim 1 , wherein at least said first and second edges of said second microelectronic element are substantially aligned with said first and second edges of said first microelectronic element.
3. The microelectronic assembly of claim 1 , wherein at least said first edge of said second microelectronic element is laterally offset from said first edge of said first microelectronic element.
4. The microelectronic assembly of claim 1 , wherein at least each of said first and second microelectronic elements comprises a flash memory.
5. The microelectronic assembly of claim 1 , wherein said at least one electrical conductor is disposed on at least one of said first and second side external surfaces and on at least one of said third and fourth side external surfaces of said microelectronic assembly.