Temperature control method for chemical vapor deposition apparatus
Provided is a method in which a difference between a surface temperature of a susceptor and a surface temperature of a substrate is accurately grasped without using a complicated high-priced equipment. A temperature control method for a chemical vapor deposition apparatus includes detecting a rotation state of a susceptor on which a substrate is accumulated on a top surface thereof, measuring a temperature of the top surface of the susceptor, calculating a temperature distribution of the top surface of the susceptor, based on the detected rotation state and the measured temperature, and controlling the temperature of the top surface of the susceptor, based on the calculated temperature distribution.
1. A temperature control method for a chemical vapor deposition apparatus, the method comprising:
detecting a rotation state of a susceptor on which a substrate is loaded on a top surface thereof;
measuring a temperature of the top surface of the susceptor;
calculating a temperature distribution of the top surface of the susceptor, based on the detected rotation state and the measured temperature; and
controlling the temperature of the top surface of the susceptor, based on the calculated temperature distribution
wherein the calculating of the temperature distribution comprises dividing the temperature distribution into a high-temperature section and a low-temperature section, based on a predetermined temperature,
wherein the calculation of the temperature distribution of the top surface of the susceptor comprises excluding a temperature change section of a circumference portion of the substrate from the high-temperature section or the low-temperature section.
2. The temperature control method of claim 1 , wherein the rotation state comprises a rotation angle of the susceptor or a rotation time of the susceptor.
3. The temperature control method of claim 1 , wherein the temperature distribution comprises a temperature distribution for each rotation angle or a temperature distribution for each rotation time.
4. The temperature control method of claim 1 , wherein the calculating of the temperature distribution further comprises allotting an identifier to a section of the temperature distribution on the top surface of the susceptor, and the controlling of the temperature of the top surface of the susceptor comprises comparing a temperature of a section to which the identifier selected by a user is allotted with a preset reference temperature to control the temperature of the top surface of the susceptor.
5. The temperature control method of claim 4 , wherein the controlling of the temperature of the top surface of the susceptor comprises comparing an average temperature of a section to which the identifier selected by a user is allotted or a real-time temperature with the preset reference temperature to control the temperature of the top surface of the susceptor.
6. The temperature control method of claim 1 , wherein the high-temperature section is a section in which the measured temperature is greater by a preset ratio than an average temperature of the top surface of the susceptor, and the low-temperature section is a section in which the measured temperature is less than by a preset ratio than the average temperature of the top surface of the susceptor.
7. The temperature control method of claim 1 , further comprising allotting an identifier to each of the high-temperature section and the low-temperature section, and the controlling of the temperature of the top surface of the susceptor comprises comparing the temperature of the section to which the identifier selected by a user is allotted with a preset reference temperature to control the temperature of the top surface of the susceptor.
8. The temperature control method of claim 1 , wherein the temperature change section is a section having a temperature change greater than a preset value.
9. The temperature control method of claim 8 , wherein the temperature change section is a section in which an average temperature change during a preset time is greater than a preset temperature change.
10. The temperature control method of claim 1 , wherein the calculation of the temperature distribution of the top surface of the susceptor comprises matching a susceptor section in substrate displacement information with the high-temperature section based on the inputted substrate displacement information and matching a substrate section in the substrate displacement information with the low-temperature section.
11. The temperature control method of claim 10 , wherein the matching of the substrate section comprises matching the substrate section with the low-temperature section to minimize a deviation between an angle of a central portion or a boundary portion of the substrate section and an angle of a central portion or a boundary portion of the low-temperature section.
12. The temperature control method of claim 10 , wherein the matching of the susceptor section comprises matching the susceptor section with the high-temperature section to minimize a deviation between an angle of a central portion or a boundary portion of the susceptor section and an angle of a central portion or a boundary portion of the high-temperature section.