Semiconductor device
A method of manufacturing a semiconductor device including a plurality of capacitors each of which has bottom electrode, dielectric layer, and top electrode includes stacking a bottom electrode layer, a dielectric layer and an top electrode layer, patterning the top electrode layer to form a plurality of top electrodes arranged in a column, forming a mask pattern that covers the plurality of top electrodes and leaves an end part of the outermost top electrode of the arrangement of the plurality of top electrodes exposed, and patterning the dielectric layer using the mask pattern.
1. A semiconductor device, comprising:
a plurality of capacitors including a bottom electrode, a dielectric layer formed on said
bottom electrode, and a plurality of top electrodes arranged in a column on said dielectric layer,
wherein the shape of the surface of the outermost top electrode in the column differs from the
shape of the surface of the top electrode adjacent to the outermost top electrode in the column; and
wherein the shape of the surface of the outermost top electrode differs from the shape of the
surface of the top electrode adjacent to the outermost top electrode in the column because at least an
end part of the surface of the outermost top electrode in the column is etched.
2. The semiconductor device according to claim 1 , wherein an outermost capacitor including a outermost top electrode is provided as a dummy capacitor.
3. The semiconductor device according to claim 1 , wherein the capacitor including the outermost top electrode and the capacitor adjacent to the capacitor are provided as dummy capacitors.
4. The semiconductor device according to claim 3 , further comprising:
an interlayer film formed over said capacitors,
wherein a via hole is formed in said interlayer film on the top electrode adjacent to the outermost top electrode.
5. The semiconductor device according to claim 1 , further comprising:
an interlayer film formed over said capacitors,
wherein a via hole is formed in said interlayer film on said outermost top electrode.
6. The semiconductor device according to claim 5 , wherein a conductive plug is embedded in said via hole.
7. The semiconductor device according to claim 1 , wherein said plurality of capacitors share the bottom electrode.
8. The semiconductor device according to claim 1 , wherein said dielectric layer is a single layer or a multilayer of one or more materials selected from the group consisting of PZT ferroelectric, Bi layer structure ferroelectric, metal oxide ferroelectric, and bismuth ferrite ferroelectric.