Semiconductor device

1. A device, comprising:

a substrate;

a base body formed on or above the substrate, the base body having a line shape in a plan view and extending along a length direction; and

a pair of wirings formed on the base body including

first and second catalyst layers formed on both side surfaces of the base body in the length direction of the base body with sandwiching the base body, and

first and second graphene layers formed on the both side surfaces of the base body in a manner of contacting the first and second catalyst layers, respectively and extending along the length direction of the base body, the graphene layers including a plurality of graphemes laminated perpendicularly with respect to the both side surfaces of the base body, respectively,

wherein a central section of the base body is an insulator, the first and second graphene layers are electrically insulated from each other by the insulator, and the pair of wirings are insulated from each other.

2. The device according to claim 1 ,

wherein a width of the first graphene layer and a width of the second graphene layer are larger than a width of a top surface of the base body.

3. The device according to claim 1 ,

wherein the width of the first and second graphene layers on the both side surfaces of the base body is equal to or more than 30 nm.

4. The device according to claim 1 ,

wherein the first and second catalyst layers contain metal, an alloy, or a carbide that contains at least one of Co, Ni, Fe, Ru, and Cu.

5. The device according to claim 1 , further comprising a contact plug,

wherein the contact plug is connected to an end of the first graphene layer or to an end of the second grapheme layer.

6. The device according to claim 1 , further comprising a plurality of contact plugs,

wherein a first contact plug is connected to an end of the first graphene layer and a second contact plug is connected to an end of the second graphene layer.

7. The device according to claim 5 ,

wherein the contact plug includes a central section and a surface layer, and the surface layer is connected to an end of the first graphene layer or to an end of the second graphene layer.

8. The device according to claim 7 ,

wherein the surface layer includes a metal containing any one of Pd, Ti, and Ni.

9. The device according to claim 1 , further comprising base layers between the base body and the first catalyst layer and between the base body and the second catalyst layer.

10. A device, comprising:

a substrate;

a base body formed on or above the substrate, the base body having a line shape in a plan view and extending along a length direction;

a pair of wirings formed on the base body including

first and second catalyst layers formed on both side surfaces of the base body in the length direction of the base body with sandwiching the base body, and

first and second graphene layers formed on the both side surfaces of the base body in a manner of contacting the first and second catalyst layers, respectively and extending along the length direction of the base body, the graphene layers including a plurality of graphenes laminated perpendicularly with respect to the both side surfaces of the base body, respectively; and

a contact plug,

wherein the first and second graphene layers are separated from each other by the base body, and the pair of wirings are electrically connected to each other by the contact plug.

11. The device according to claim 10 ,

wherein a width of the first graphene layer and a width of the second graphene layer are larger than a width of a top surface of the base body.

12. The device according to claim 10 ,

wherein a width of the first graphene layer and a width of the second graphene layer are equal to or more than 30 nm.

13. The device according to claim 10 ,

wherein the contact plug is connected to ends of the first and second graphene layers.

14. The device according to claim 13 ,

wherein the contact plug is connected directly to ends of at least two graphenes of the plurality of graphenes included in each of the first and second graphene layers.

15. A device, comprising:

a substrate;

a base body formed on or above the substrate, the base body having a line shape in a plan view and extending along a length direction;

a pair of wirings formed on the base body including

first and second catalyst layers formed on both side surfaces of the base body in the length direction of the base body with sandwiching the base body, and

first and second graphene layers formed on the both side surfaces of the base body in a manner of contacting the first and second catalyst layers, respectively and extending along the length direction of the base body, the graphene layers including a plurality of graphemes laminated perpendicularly with respect to the both side surfaces of the base body, respectively;

a third catalyst layer formed to cover a top surface of the base body; and

a third graphene layer formed on the top surface of the base body in a manner of contacting the third catalyst layer and extending along the length direction of the base body, the third graphene layer including a plurality of graphenes laminated perpendicularly with respect to the top surface of the base body,

wherein the first graphene layer and the second grapheme layer are connected by the third graphene layer.

16. The device according to claim 15 ,

wherein the third catalyst layer contains a metal, an alloy, or a carbide that contains at least one of Co, Ni, Fe, Ru, and Cu.

17. The device according to claim 15 , further comprising a contact plug,

wherein the contact plug is connected to ends of the first and second graphene layers.

18. The device according to claim 17 ,

wherein the contact plug is connected directly to ends of at least two graphenes of the plurality of graphenes included in the first graphene layer and ends of at least two graphenes of the plurality of graphenes included in the second graphene layer.

19. The device according to claim 17 ,

wherein the contact plug passes through the third grapheme layer.

20. The device according to claim 10 ,

wherein the base body is sandwiched between the first graphene layer and the second graphene layer via the first and second catalyst layers.

21. The device according to claim 1 ,

wherein the base body is sandwiched between the first graphene layer and the second graphene layer via the first and second catalyst layers.