Method and apparatus for material deposition
Broadly speaking, a method and an apparatus are provided for depositing a material on a semiconductor wafer (“wafer”). More specifically, the method and apparatus provide for selective heating of a surface of the wafer exposed to an electroless plating solution. The selective heating is provided by applying radiant energy to the wafer surface. The selective heating of the wafer surface causes a temperature increase at an interface between the wafer surface and the electroless plating solution. The temperature increase at the interface in turn causes a plating reaction to occur at the wafer surface. Thus, material is deposited on the wafer surface through an electroless plating reaction that is initiated and controlled by varying the temperature of the wafer surface using an appropriately defined radiant energy source.
1. An apparatus for depositing a material on a surface of a wafer, comprising:
a tank defined by an enclosing wall and a bottom, the tank being configured to contain an electroless plating solution bath;
a wafer holder configured to rotate a portion of the wafer through the electroless plating solution bath to be contained within the tank; and
a radiant energy source disposed above the electroless plating solution bath to be contained within the tank, the radiant energy source being oriented to direct radiant energy toward the portion of the wafer upon rotation out of the electroless plating solution bath to be contained within the tank.
2. An apparatus for depositing a material on a surface of a wafer as recited in claim 1 , wherein the radiant energy source is configured to generate radiant energy having a wavelength range that is capable of selectively heating a material present at a surface of the wafer upon which the radiant energy will be incident.
3. An apparatus for depositing a material on a surface of a wafer as recited in claim 1 , wherein the radiant energy source is configured to apply a substantially uniform amount of the radiant energy over the surface of the wafer.
4. An apparatus for depositing a material on a surface of a wafer as recited in claim 1 , further comprising:
an inlet for supplying the electroless plating solution to the tank; and
an outlet for removing the electroless plating solution from the tank.
5. An apparatus for depositing a material on a surface of a wafer as recited in claim 1 , further comprising:
a heat exchanger capable of maintaining a temperature of the electroless plating solution to be contained within the tank.
6. An apparatus for depositing a material on a surface of a wafer, comprising:
a tank defined by an enclosing wall and a bottom, the tank being configured to contain an electroless plating solution;
a wafer holder configured to dip a wafer into the electroless plating solution to be contained within the tank, the wafer holder further configured to remove the wafer from the electroless plating solution to be contained within the tank; and
a radiant energy source disposed above the electroless plating solution to be contained within the tank, the radiant energy source being oriented to direct radiant energy toward the wafer upon removal of the wafer from the electroless plating solution to be contained within the tank.
7. An apparatus for depositing a material on a surface of a wafer as recited in claim 6 , wherein the radiant energy source is configured to generate radiant energy having a wavelength range that is capable of selectively heating a material present at a surface of the wafer upon which the radiant energy will be incident.
8. An apparatus for depositing a material on a surface of a wafer as recited in claim 6 , wherein the radiant energy source is configured to apply a substantially uniform amount of the radiant energy over the surface of the wafer.
9. An apparatus for depositing a material on a surface of a wafer as recited in claim 6 , further comprising:
an inlet for supplying the electroless plating solution to the tank; and
an outlet for removing the electroless plating solution from the tank.
10. An apparatus for depositing a material on a surface of a wafer as recited in claim 6 , further comprising:
a heat exchanger capable of maintaining a temperature of the electroless plating solution to be contained within the tank.