Nonvolatile semiconductor memory having a word line bent towards a select gate line side

1. A nonvolatile semiconductor memory comprising:

cell units each having a first select gate transistor, a second select gate transistor, memory cells connected in series in a first direction and provided between the first and second select gate transistors;

blocks, each comprising the cell units arranged in a second direction which crosses the first direction and having a first select gate line extending in the second direction and connected to the first select gate transistors, a second select gate line extending in the second direction and connected to the second select gate transistors, and word lines extending in the second direction, respectively connected to the memory cells;

a first hookup area provided at a first side of the blocks, all word lines in a first block among the blocks extending to the first hook up area, respectively, having distal ends, and respectively connected to contact plugs in the first hook up area;

a second hookup area provided at a second side of the blocks, all word lines in a second block among the blocks extending to the second hook up area, respectively having distal ends, and respectively connected to contact plugs in the second hook up area, the first side and the second side being opposed in the second direction,

wherein, the first block is a j-th (j is an odd number) block, and the second block is a (j+1)-th block,

all of the word lines in the second block are not connected to a contact plug at the first side of the blocks, and

all of the word lines in the first block are not connected to a contact plug at the second side of the blocks.

2. The memory of claim 1 , wherein the word lines in the first block comprise first and second groups, the word lines in the second block comprise third and fourth groups, the word lines in the first group are bent to the first select gate line side in the first block, the word lines in the third group are bent to the first select gate line side in the second block, the word lines in the second group are bent to the second select gate line side in the first block, the word lines in the fourth group are bent to the second select gate line side in the second block, and the first and second select gate line sides are opposed to each other.

3. The memory of claim 1 , wherein the word lines extending from the first block have fringes in the first hook up area, and the word lines extending from the second block have fringes in the second hook up area.

4. The memory of claim 3 , wherein the fringes include a first fringe which is connected to an i-th (i is an odd number) word line from the first select gate line or the second select gate line, and a second fringe which is connected to an (i+1)-th word line from the first select gate line or the second select gate line, and the first and second fringes extend in opposite directions between bent points and distal ends of the word lines.

5. The memory of claim 3 , wherein the contact plugs are in contact with the fringes, respectively.

6. The memory of claim 1 , further comprising:

a first driver provided at the first side of the blocks, the first hookup area arranged between the blocks and the first driver; and

a second driver provided at the second side of the blocks, the second hookup area arranged between the blocks and the second driver.

7. The memory of claim 1 , wherein the cell units are NAND cell units.

8. The memory of claim 1 , wherein all word lines extending from the first block have bent points in the first hook up area, and all word lines extending from the second block have bent points in the second hook up area.

9. The memory of claim 1 , wherein all word lines extending from the first block have bent points in the first hook up area, all word lines extending from the second block have bent points in the second hook up area, and first and second select gate lines in the first and second blocks do not have bent points.

10. The memory of claim 1 , wherein at least one of the word lines extending from the first block is bent to one side in the first direction, at least one of the word lines extending from the second block is bent to the other side in the first direction.

11. The memory of claim 1 , wherein all word lines extending from the first block have fringes in the first hook up area, all word lines extending from the second block have fringes in the second hook up area, and first and second select gate lines in the first and second blocks do not have fringes.

12. A nonvolatile semiconductor memory comprising:

cell units each having a first select gate transistor, a second select gate transistor, memory cells connected in series in a first direction and provided between the first and second select gate transistors;

blocks, each comprising the cell units arranged in a second direction which crosses the first direction and having a first select gate line extending in the second direction and connected to the first select gate transistors, a second select gate line extending in the second direction and connected to the second select gate transistors, and word lines extending in the second direction, respectively connected to the memory cells;

a first hookup area provided at a first side of the blocks, all word lines in first and second blocks among the blocks extending to the first hook up area, respectively having distal ends, and respectively connected to contact plugs in the first hook up area; and

a second hookup area provided at a second side of the blocks, all word lines in third and fourth blocks among the blocks extending to the second hook up area, respectively having distal ends, and respectively connected to contact plugs in the second hook up area, the first side and the second side being opposite to each other in the second direction,

wherein the first and second blocks are adjacent to each other, the first and third blocks are adjacent to each other, and the second and fourth blocks are adjacent to each other,

all of the word lines in the third and fourth blocks are not connected to a contact plug at the first side of the blocks, and

all of the word lines in the first and second blocks are not connected a contact plug at the second side of the blocks.

13. The memory of claim 12 , wherein the word lines extending from the first and second blocks have fringes in the first hook up area, and the word lines extending from the third and the fourth blocks have fringes in the second hook up area.

14. The memory of claim 13 , wherein the fringes include a first fringe which is connected to an i-th (i is an odd number) word line from the first select gate line or the second select gate line, a second fringe which is connected to an (i+1)-th word line from the first select gate line or the second select gate line, and the first and second fringes extend in opposite directions between bent points and distal ends of the word lines.

15. The memory of claim 13 , wherein the contact plugs are in contact with the fringes, respectively.

16. The memory of claim 12 , further comprising:

a first driver provided at the first side of the blocks, the first hookup area arranged between the blocks and the first driver; and

a second driver provided at the second side of the blocks, the second hookup area arranged between the blocks and the second driver.

17. The memory of claim 12 , wherein the cell units are NAND cell units.

18. The memory of claim 12 , wherein all word lines extending from the first and the second blocks have bent points in the first hook up area, and all word lines extending from the third and the fourth blocks have bent points in the second hook up area.

19. The memory of claim 12 , wherein all word lines extending from the first and the second blocks have bent points in the first hook up area, all word lines extending from the third and the fourth blocks have bent points in the second hook up area, and first and second select gate lines in the first, second, third, and fourth blocks do not have bent points.

20. The memory of claim 12 , wherein at least one of the word lines extending from the first block is bent to one side in the first direction, at least one of the word lines extending from the second block is bent to the other side in the first direction.

21. The memory of claim 12 , wherein at least one of the word lines extending from the third block is bent to one side in the first direction, at least one of the word lines extending from the fourth block is bent to the other side in the first direction, the distal ends of the at least one of the word lines extending from the third and fourth blocks facing each other.

22. The memory of claim 12 , wherein all word lines extending from the first and the second blocks have fringes in the first hook up area, all word lines extending from the third and the fourth blocks have fringes in the second hook up area, and first and second select gate lines in the first, second, third, and fourth blocks do not have fringes.