Fluorescent material and light-emitting device employing the same
The embodiment provides a process for production of a green light-emitting oxynitride fluorescent material having Sr 3 Al 3 Si 13 O 2 N 21 crystal structure, and also provides the fluorescent material produced by that process. An metal halide is adopted in the process as one of the starting material metal compounds. As the metal halide, a Ca or Na compound as well as a Sr compound can be preferably employed.
1. A process for production of an oxynitride fluorescent material represented by the following formula (1):
(M 1−x R x ) 3−y Si 13−z Al 3+z Al 3+z O 2+u N 21−w (1)
in which M is an element selected from the IA group elements, the IIA group elements, the IIIA group elements other than Al, the IIIB group elements, the rare earth elements, and the IVA group elements other than Si; R is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; and x, y, z, u and w are numbers satisfying the conditions of 0<x≦1, −0.1≦y≦0.15, −1≦z≦1, and −1≦u−w≦1.5, respectively;
comprising the steps of
mixing a nitride or carbide of said element M; a halide of said element M; an oxide, nitride or carbonate of said element R; a nitride, oxide or carbide of Si; and a nitride, oxide or carbide of Al, to prepare a material mixture;
firing the material mixture; and then
acid-washing the fired product.
2. The process according to claim 1 , wherein M is selected from the group consisting of Li, Na, K, Mg, Ca, Sr, B, Ga, In, Y, Sc, Gd, La, Lu and Ge.
3. The process according to claim 1 , wherein said nitride of M is selected from the group consisting of Sr 3 N 2 , Ca 3 N 2 , Ba 3 N 2 , Sr 2 N and SrN.
4. The process according to claim 1 , wherein said nitride of R is EuN.
5. The process according to claim 1 , wherein the halide of said element M is SrF 2 .
6. A process for production of an oxynitride fluorescent material represented by the following formula (2):
(M′ 1−x−x0 M 0 x0 R x ) 3−y Si 13−z Al 3+z O 2+u N 21−w (2)
in which M′ is an element selected from the IA group elements other than Na, the IIA group elements other than Ca, the IIIA group elements other than Al, the IIIB group elements, the rare earth elements, and the IVA group elements other than Si; M 0 is an element selected from the group consisting of Ca and Na; R is an element selected from the group consisting of Eu, Ce, Mn, Tb, Yb, Dy, Sm, Tm, Pr, Nd, Pm, Ho, Er, Cr, Sn, Cu, Zn, As, Ag, Cd, Sb, Au, Hg, Tl, Pb, Bi and Fe; and x, x0, y, z, u and w are numbers satisfying the conditions of 0<x≦1, 0<x0<0.08, −0.1≦y≦0.15, −1≦z≦1, and −1<u-w≦1.5, respectively;
comprising the steps of
mixing a nitride or carbide of said element M′; a halide of said element M 0 ; an oxide, nitride or carbonate of said element R; a nitride, oxide or carbide of Si; and a nitride, oxide or carbide of Al, to prepare a material mixture;
firing the material mixture; and then
acid-washing the fired product.
7. The process according to claim 6 , wherein M is selected from the group consisting of Li, K, Mg, Sr, B, Ga, In, Y, Sc, Gd, La, Lu and Ge.
8. The process according to claim 6 , wherein said nitride of M is selected from the group consisting of Sr 3 N 2 , Ca 3 N 2 , Ba 3 N 2 , Sr 2 N and SrN.
9. The process according to claim 6 , wherein said nitride of R is EuN.
10. The process according to claim 6 , wherein the halide of said element M 0 is CaCl 2 or NaF.
11. The process according to claim 1 , wherein the firing is carried out under a pressure of more than atmospheric pressure.
12. The process according to claim 1 , wherein the firing is carried out at a temperature of from 1500 to 2000° C.
13. The process according to claim 6 , wherein the firing is carried out under a pressure of more than atmospheric pressure.
14. The process according to claim 6 , wherein the firing is carried out at a temperature of from 1500 to 2000° C.