Method for non-shrinkable IP integration

1. A method comprising:

providing a design of an integrated circuit at a first scale, wherein the integrated circuit comprises:

a shrinkable circuit comprising a first intellectual property (IP), wherein the first IP comprises layouts of the shrinkable circuit; and

a non-shrinkable circuit comprising a second IP having a hierarchical structure, wherein the second IP comprises layouts of the non-shrinkable circuit;

forming a marker layer to cover the non-shrinkable circuit, wherein the shrinkable circuit is not covered by the marker layer; and

simulating electrical performance of the non-shrinkable circuit having the hierarchical structure using a simulation tool, wherein in the step of simulating, the simulated non-shrinkable circuit has layouts at the first scale and vertical sizes corresponding to a technology-node at a second scale smaller than the first scale, wherein the step of simulating is performed by using a computer.

2. The method of claim 1 further comprising:

blowing up the second IP by a blow-up factor to generate a blown-up IP; and

integrating the blown-up IP with the first IP to generate a third IP.

3. The method of claim 2 further comprising:

shrinking the third IP by a shrinking factor being an inverse of the blow-up factor; and

forming a lithography mask having patterns of the third IP after it is shrunk.

4. The method of claim 3 further comprising:

identifying the non-shrinkable circuit from the third IP through identifying the marker layer; and

before the step of forming the lithography mask, performing a logic operation to apply an adjustment to critical dimensions of features of the non-shrinkable circuit.

5. The method of claim 4 , wherein the step of simulation is performed to the non-shrinkable circuit with the adjustment applied.

6. The method of claim 3 , wherein the step of shrinking the third IP is performed using an optical method.

7. The method of claim 2 , wherein the blow-up factor is equal to a ratio of the first scale to the second scale.

8. The method of claim 7 , wherein the step of blowing up the second IP comprises:

blowing up contacts/vias in the second IP by the blow-up factor to generate blown-up contacts/vias;

recalculating new locations of the contacts/vias in the blown-up IP;

deleting the blown-up contacts/vias from the blown-up IP; and

redrawing the contacts/vias in the blown-up IP, with the redrawn contacts/vias having same sizes as the contacts/vias in the second IP.

9. The method of claim 2 , wherein in the blown-up IP, the hierarchical structure of the non-shrinkable circuit is flattened.

10. A method comprising:

providing a design of an integrated circuit at a first scale, wherein the integrated circuit comprises:

a shrinkable circuit comprising a first intellectual property (IP), wherein the first IP comprises layouts of the shrinkable circuit; and

a non-shrinkable circuit comprising a second IP having a hierarchical structure, wherein the second IP comprises layouts of the non-shrinkable circuit;

generating a marker layer to cover the non-shrinkable circuit, wherein the shrinkable circuit is not covered by the marker layer;

identifying the non-shrinkable circuit by identifying circuits covered by the marker layer;

blowing up the second IP by a blow-up factor to generate a blown-up IP, wherein the step of blowing up the second IP is performed by using a computer;

integrating the blown-up IP with the first IP to generate a whole-chip IP; and

simulating electrical performance of the non-shrinkable circuit having a hierarchical structure using a simulation tool, wherein in the step of simulating, the simulated non-shrinkable circuit has layouts at the first scale and vertical sizes corresponding to a technology-node at a second scale smaller than the first scale, and wherein the blow-up factor is equal to a ratio of the first scale to the second scale.

11. The method of claim 10 further comprising:

performing a logic operation to apply an adjustment to critical dimensions of features of the non-shrinkable circuit; and

after the step of performing the logic operation, forming a lithography mask from the whole-chip IP, wherein the adjustment to the critical dimensions is incorporated in the lithography mask.

12. The method of claim 11 , wherein in the step of simulating the electrical performance of the non-shrinkable circuit, the adjustment is applied to the simulated non-shrinkable circuit.

13. The method of claim 11 , wherein the critical dimensions of the features are selected from the group consisting essentially of gate lengths of transistors in the non-shrinkable circuit, gate widths of the transistors in the non-shrinkable circuit, and combination thereof.

14. The method of claim 11 , wherein no logic operation is performed to critical dimensions of features of the shrinkable circuit.

15. The method of claim 11 , wherein the step of forming the lithography mask comprises shrinking the whole-chip IP by a ratio of the second scale to the first scale.

16. A method comprising:

providing a design of an integrated circuit at a first scale, wherein the integrated circuit comprises:

a shrinkable circuit comprising a first intellectual property (IP); and

a non-shrinkable circuit comprising a second IP having a hierarchical structure;

blowing up the second IP by a blow-up factor using a computer to generate a blown-up IP comprising:

blowing up contacts/vias in the second IP by the blow-up factor to generate blown-up contacts/vias;

recalculating new locations of the contacts/vias in the blown-up IP;

deleting the blown-up contacts/vias from the blown-up IP; and

redrawing the contacts/vias in the blown-up IP, with the redrawn contacts/vias having same sizes as the contacts/vias in the second IP.

17. The method of claim 16 further comprising integrating the blown-up IP with the first IP to generate a third IP, wherein contacts/vias of the shrinkable circuit in the third IP have same sizes as respective contacts/vias of the shrinkable circuit in the first IP.

18. The method of claim 17 further comprising optically shrinking the third IP to generate a lithography mask at a second scale, wherein a ratio of the first scale to the second scale equals the blow-up factor.

19. The method of claim 16 , wherein the contacts/vias comprises contact plugs.

20. The method of claim 16 , wherein the contacts/vias comprises vias.