Semiconductor device
The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 μm, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof.
1. A semiconductor device comprising:
a semiconductor layer;
an interlayer dielectric film formed on the semiconductor layer;
a wire formed on the interlayer dielectric film and configured to have a width of not more than 0.4 μm, the wire having a lower surface entirely in contact with the interlayer dielectric film; and
a plurality of broad portions integrally formed with the wire and configured to extend from the wire in the width direction thereof;
wherein the plurality of broad portions are provided at a prescribed interval in a direction along the wire; and
wherein a length of each of the plurality of broad portions in the direction along the wire is less than a length of the wire between an adjacent pair of the plurality of broad portions.
2. The semiconductor device according to claim 1 , wherein the prescribed interval is not less than 100 μm and not more than 300 μm.
3. The semiconductor device according to claim 1 , wherein the plurality of broad portions are arranged at regular intervals.
4. The semiconductor device according to claim 1 , wherein each of the plurality of broad portions has a width that is twice the width of the wire.
5. The semiconductor device according to claim 1 , wherein each of the plurality of broad portions extends toward both sides of the wire.
6. The semiconductor device according to claim 1 , wherein each of the plurality of broad portions extends toward at least one side of the wire.
7. The semiconductor device according to claim 1 , further comprising another interlayer dielectric film or a passivation film formed on the wire and each of the plurality of broad portions.
8. The semiconductor device according to claim 1 , wherein a wiring trench is dug in the dielectric film from an upper surface thereof, and the wire and each of the plurality of broad portions are embedded in the wiring trench.
9. The semiconductor device according to claim 1 , wherein each of the plurality of broad portions has a first side perpendicular to a side of the wire between the plurality of broad portions.
10. The semiconductor device according to claim 9 , wherein each of the plurality of broad portions further has a second side parallel to the side of the wire between the plurality of broad portions, and a chamfering corner connecting the first and second sides.
11. The semiconductor device according to claim 1 , wherein the wire is made of a metallic material mainly composed of Cu.
12. The semiconductor device according to claim 11 , the wire including a barrier film having barrier properties against diffusion of Cu.
13. The semiconductor device according to claim 12 , wherein the barrier film is made of a Ta-based material.