System and methods for growing high-resistance single crystals

1. A method of growing high-resistivity single crystals, comprising:

placing a raw material in a vacuum-sealable ampoule, wherein the raw material comprises polycrystalline Group III-V material, Group II-VI material, or Group IV material, wherein the raw material comprises moisture and impurities that include oxide compounds and carbon;

capping an open end of the vacuum-sealable ampoule while leaving an air channel between the cap and the rim of the open end of the vacuum-sealable ampoule, wherein the cap includes a bulb connected to the opening of the cap with a neck;

heating the raw material in the vacuum-sealable ampoule to vaporize the moisture in the raw material;

exhausting the vaporized moisture from the vacuum-sealable ampoule;

fusing the cap to the rim of the open end of the vacuum-sealable ampoule to vacuum seal the vacuum-sealable ampoule;

heating the raw material in the vacuum-sealable ampoule to vaporize the oxide compounds in the raw material;

cooling at least a portion of the bulb to produce condensed oxide compounds on an inner surface of the bulb;

fusing the neck of the bulb to isolate the condensed oxide compounds from the vacuum-sealable ampoule;

breaking the neck to remove the bulb and the condensed oxide compounds from the vacuum-sealable ampoule; and

placing the vacuum-sealable ampoule comprising the raw material in a crystal growth apparatus to grow a high-resistivity crystal from the raw material.

2. The method of claim 1 , wherein the raw material is placed in a crucible positioned in the vacuum-sealable ampoule.

3. The method of claim 1 , wherein the vacuum-sealable ampoule is formed by quartz or glass.

4. The method of claim 1 , wherein the impurities comprise at least one of silicon, carbon, or germanium.

5. The method of claim 1 , wherein the high-resistivity crystal has an electric resistivity above 10 7 Ω-cm at room temperature.

6. The method of claim 1 , wherein the impurities include arsenide or arsenic compounds, the method comprising:

after the step of fusing the cap to the rim of the open end of the vacuum-sealable ampoule, heating the raw material in the vacuum-sealable ampoule to vaporize the arsenide and arsenic compounds in the raw material; and

cooling a portion of the vacuum-sealable ampoule to produce condensed arsenide and arsenic compounds on an inner surface of the portion of the vacuum-sealable ampoule to remove the arsenide and arsenic from the raw material.

7. The method of claim 6 , wherein the arsenide or the arsenic compounds in the impurities are selected from the group consisting of AlAs, InAs, YAs, B 12 As 2 , Ca 3 As 2 , and Zn 3 As 2 .

8. The crystal growth apparatus of claim 1 , wherein the polycrystalline material comprises GaAs, AlAs, GaN, CdTe, InAs, GaSb, Si, or Ge.

9. The method of claim 1 , wherein a seed crystal is placed in contact with the raw material in the vacuum-sealable ampoule, the method further comprising:

heating the raw material to form a melt in contact with a seed crystal in the crystal growth apparatus, wherein the raw material comprises carbon as an impurity; and

growing the high-resistivity crystal from the melt.

10. A method of growing high-resistivity single crystals, comprising:

placing a raw material in a vacuum-sealable ampoule, wherein the raw material comprises polycrystalline Group III-V material, Group II-VI material, or Group IV material, wherein the raw material comprises moisture and impurities that include oxide compounds and carbon;

heating the raw material in the vacuum-sealable ampoule to a first temperature to vaporize the moisture in the raw material;

removing the vaporized moisture from the vacuum-sealable ampoule;

heating the raw material in the vacuum-sealable ampoule to a second temperature to vaporize the oxide compounds in the raw material, wherein the second temperature is higher than the first temperature;

removing condensed oxide compounds from the vacuum-sealable ampoule; and

heating the raw material to form a melt, wherein the raw material comprises carbon as an impurity; and

growing a high-resistivity crystal from the melt, wherein the high-resistivity crystal has an electric resistivity above 10 7 Ω-cm at room temperature.

11. The method of claim 10 , wherein the first temperature is above 100° C., and wherein the second temperature is above 120° C.

12. The method of claim 10 , wherein the steps of heating the raw material to form a melt and growing a high-resistivity crystal from the melt are performed in a crystal growth apparatus.

13. A method of growing high-resistivity single crystals, comprising:

placing a raw material in a vacuum-sealable ampoule through an open end of the vacuum-sealable ampoule, wherein the raw material comprises polycrystalline GaAs, moisture, and impurities, wherein the impurities comprise arsenide or arsenic compounds and carbon;

heating the raw material in the vacuum-sealable ampoule to vaporize the moisture in the raw material, wherein the impurities comprise oxide compounds, wherein the step of heating the raw material in the vacuum-sealable ampoule to vaporize the arsenide and arsenic compounds in the raw material vaporizes the oxide compounds in the raw material;

exhausting the vaporized moisture from the vacuum-sealable ampoule;

sealing the vacuum-sealable ampoule;

heating the raw material in the vacuum-sealable ampoule to vaporize the arsenide and arsenic compounds in the raw material;

cooling a portion of the vacuum-sealable ampoule to produce condensed arsenide and arsenic compounds on an inner surface of the portion of the vacuum-sealable ampoule;

after the step of cooling a portion of the vacuum-sealable ampoule, lowering the temperature of the raw material in the vacuum-sealable ampoule to below the vaporization temperature of the arsenide and arsenic compounds but above the vaporization temperature of the oxide compounds:

cooling a surface in connection with the vacuum-sealable ampoule to produce condensed oxide compounds on the surface;

removing the condensed oxide compounds from the vacuum-sealable ampoule; and

placing the vacuum-sealable ampoule comprising the raw material in a crystal growth apparatus to grow a high-resistivity GaAs crystal, wherein the raw material comprises carbon as an impurity.

14. The method of claim 13 , wherein the raw material is placed in a crucible positioned in the vacuum-sealable ampoule, wherein the condensed arsenide or arsenic compounds are formed outside of the crucible, wherein the high-resistivity crystal is grown in the crucible.

15. The method of claim 13 , wherein the vacuum-sealable ampoule is formed by quartz or glass.

16. The method of claim 13 , further comprising:

capping the open end of the vacuum-sealable ampoule after the step of exhausting the vaporized moisture, wherein the step of sealing comprises fusing the cap to the rim of the open end of the vacuum-sealable ampoule to vacuum seal the vacuum-sealable ampoule.

17. The method of claim 16 , wherein the impurities comprise oxide compounds, wherein the step of heating the raw material in the vacuum-sealable ampoule to vaporize the arsenide and arsenic compounds in the raw material vaporizes the oxide compounds in the raw material, wherein the cap includes a bulb connected to the opening of the cap with a neck, the method further comprising:

after the step of sealing the vacuum-sealable amp, lowering the temperature of the raw material in the vacuum-sealable ampoule to below the vaporization temperature of the arsenide and arsenic compounds but above the vaporization temperature of the oxide compounds;

cooling at least a portion of the bulb in the cap to below the vaporization temperature of the oxide compounds to produce condensed oxide compounds on an inner surface of the bulb;

fusing the neck of bulb to isolate the condensed oxide compounds from the vacuum-sealable ampoule; and

breaking the neck of the bulb to separate the bulb and the condensed oxide compounds from the vacuum-sealable ampoule.

18. The method of claim 13 , wherein the high-resistivity GaAS crystal has an electric resistivity above 10 8 Ω-cm at room temperature.

19. The method of claim 13 , further comprising:

heating the raw material to form a melt in the crystal growth apparatus, wherein the raw material comprises carbon as an impurity; and

growing the high-resistivity GaAs crystal from the melt.