Thin film transistor having specified transmittance to light
A first gate electrode ( 2 ) is formed on a substrate ( 1 ); a first gate insulating layer ( 3 ) is formed so as to cover the first gate electrode ( 2 ); a semiconductor layer ( 4 ) including an oxide semiconductor is formed on the first gate insulating layer ( 3 ); a second gate insulating layer ( 7 ) is formed on the semiconductor layer ( 4 ); a second gate electrode ( 8 ) having a thickness equal to or larger than a thickness of the first gate electrode ( 2 ) is formed on the second gate insulating layer ( 7 ); and a drain electrode ( 6 ) and a source electrode ( 5 ) are formed so as to be connected to the semiconductor layer ( 4 ).
1. A thin film transistor comprising:
a substrate;
a first gate electrode formed on said substrate;
a first gate insulating layer formed so as to cover said first gate electrode;
a semiconductor layer comprising an oxide semiconductor and formed on said first gate insulating layer;
a second gate insulating layer formed on said semiconductor layer;
a second gate electrode formed on said second gate insulating layer; and
a drain electrode and a source electrode formed so as to be connected to said semiconductor layer,
wherein said second gate electrode has a thickness larger than a thickness of said first gate electrode, and
wherein a thickness of said first gate electrode is equal to or smaller than a thickness of said first gate insulating layer, and
wherein said first gate electrode, said first gate insulating layer, said second gate insulating layer, said semiconductor layer, said drain electrode, and said source electrode have a transmittance of 50% or more for light having a wavelength of 365 nm or more.
2. The thin film transistor according to claim 1 , wherein at least one of said drain electrode and said source electrode is in contact with said semiconductor layer.
3. The thin film transistor according to claim 1 , wherein said semiconductor layer comprises an oxide semiconductor containing at least one element selected from the group consisting of Zn, Ga, In and Sn.
4. The thin film transistor according to claim 1 , wherein said semiconductor layer comprises an oxide semiconductor containing In—Ga—Zn—O.
5. A thin film transistor comprising:
a substrate;
a first gate electrode formed on said substrate;
a first gate insulating layer formed so as to cover said first gate electrode;
a semiconductor layer comprising an oxide semiconductor and formed on said first gate insulating layer;
a second gate insulating layer formed on said semiconductor layer;
a second gate electrode formed on said second gate insulating layer; and
a drain electrode and a source electrode formed so as to be connected to said semiconductor layer,
wherein said second gate electrode has a thickness larger than a thickness of said first gate electrode, and
wherein a thickness of said first gate electrode is equal to or smaller than a thickness of said first gate insulating layer,
wherein at least one of said first gate electrode and said second gate electrode has a transmittance of 50% or less for light having a wavelength of 365 nm or more.
6. The thin film transistor according to claim 5 , wherein at least one of said drain electrode and said source electrode is in contact with said semiconductor layer.
7. The thin film transistor according to claim 5 , wherein said semiconductor layer comprises an oxide semiconductor containing at least one element selected from the group consisting of Zn, Ga, In and Sn.
8. The thin film transistor according to claim 5 , wherein said semiconductor layer comprises an oxide semiconductor containing In—Ga—Zn—O.