Method for manufacturing a semiconductor die and a semiconductor device comprising the semiconductor die obtained thereby
Disclosed is a method for dicing a semiconductor wafer. The method for dicing a semiconductor wafer prevents a die from being contaminated with silicon dust, generated during the dicing of the wafer, and thus prevents defects in a subsequent wire bonding step, such as defects in bonding wire, contamination of a semiconductor device, etc. The method for dicing a semiconductor wafer comprises the steps of: applying a fluorine-containing polymer coating agent onto one surface of a wafer having a circuit pattern formed thereon to form a polymer coating layer, before dicing the wafer.
1. A method for manufacturing a semiconductor die, which comprises:
forming a fluorine-containing polymer coating layer on a surface of a semiconductor wafer;
dicing the semiconductor wafer; and
removing the fluorine-containing polymer coating layer.
2. The method according to claim 1 , wherein the fluorine-containing polymer coating layer has a thickness of about 0.1μm-10μm.
3. The method according to claim 1 , wherein removing the fluorine-containing polymer coating layer further comprises the steps of:
applying a decoating agent comprising of a fluorine-containing solvent; and
cleaning the semiconductor wafer.
4. The method according to claim 3 , wherein applying the decoating agent on the fluorine-containing coating layer is conducted through a vapor degreasing process or a dipping process.
5. The method according to claim 3 , wherein the decoating agent is a fluorine-containing solvent having about 100-800 molecular weight.
6. The method according to claim 3 , wherein the decoating agent is fluorine-substituted ether, fluorine-substituted ester or fluorine-substituted ketone.
7. The method according to claim 3 , wherein the decoating agent is a compound represented by C n F 2n+1 —R—C m H 2m+1 ,
wherein R is O, C═O or COO,
n is an integer of 2-8, and
m is an integer of 1-5.
8. The method according to claim 3 , wherein the decoating agent is a compound having 30 wt % or more of fluorine atoms based on the total weight of the decoating agent.
9. The method according to claim 1 , wherein the fluorine-containing polymer coating layer is formed by a fluorine-containing polymer coating agent comprising a fluorine-containing polymer compound and a solvent.
10. The method according to claim 9 , wherein the fluorine-containing polymer compound has both a hydrophobic group and a hydrophilic group.
11. The method according to claim 9 , wherein the fluorine-containing polymer compound has 1,000-1,000,000 of molecular weight.
12. The method according to claim 9 , wherein the fluorine-containing polymer compound is represented by C a H b F c O d S e N f , wherein a is 10-10,000, b is 10-20,000, c is 10-20,000, d is 10-1,000, e is 0-100, and f is 0-1,000.
13. The method according to claim 9 , wherein the fluorine-containing polymer compound comprises 30 wt % or more of fluorine atoms based on the total weight of the compound.
14. The method according to claim 9 , wherein the fluorine-containing coating agent comprises about 0.1-50 parts by weight of the fluorine-containing polymer compound based on 100 parts by weight of the solvent.
15. The method according to claim 9 , wherein the fluorine-containing coating agent comprises 30 wt % or more of fluorine atoms based on the total weight of the agent.
16. The method according to claim 9 , wherein the solvent is a fluorine-containing solvent having a molecular weight of about 100-800.
17. The method according to claim 16 , wherein the fluorine-containing solvent is fluorine-substituted ether, fluorine-substituted ester or fluorine-substituted ketone.
18. The method according to claim 16 , wherein the fluorine-containing solvent is a compound represented by C k F 2n+1 —R—C m H 2m+1 ,
wherein R is O, C═O or COO,
n is an integer of 2-8, and
m is an integer of 1-5.
19. The method according to claim 16 , wherein the fluorine-containing solvent is a compound comprising 30 wt % or more of fluorine atoms based on the total weight of the compound.