Power semiconductor module for wide temperature applications
A power semiconductor module includes an insulating substrate with a conductive circuit layer attached to one side and a baseplate attached to the other side. A power semiconductor device is attached to the conductive circuit layer. The conductive circuit layer and the baseplate are formed of a material with a coefficient of thermal expansion less than about 8.0×10 −6 /° C. and a density less than about 4 g/cm 3 .
1. A power semiconductor module comprising:
an electrically insulating substrate;
a baseplate attached to a first side of the electrically insulating substrate;
a conductive layer directly attached to a second side of the electrically insulating substrate opposite the first side of the electrically insulating substrate; and
a power semiconductor device physically and electrically attached to a side of the conductive layer not attached to the electrically insulating substrate;
wherein the baseplate and the conductive layer are formed of a material with a coefficient of thermal expansion less than about 8.0×10 −6 /° C. and a density less than about 4 g/cm 3 .
2. The power semiconductor module of claim 1 wherein the conductive layer is a patterned circuit layer.
3. The power semiconductor module of claim 1 further comprising a solderability-enhancing layer between the conductive layer and the power semiconductor device.
4. The power semiconductor module of claim 3 , wherein the solderability-enhancing layer is a metal layer.
5. The power semiconductor module of claim 4 , wherein the metal layer is nickel.
6. The power semiconductor module of claim 1 , wherein the electrically insulating substrate is a ceramic.
7. The power semiconductor module of claim 6 , wherein the ceramic comprises at least one of aluminum nitride and aluminum oxide.
8. The power semiconductor module of claim 1 , wherein the material forming the baseplate and the conductive layer is aluminum silicon carbide.
9. The power semiconductor module of claim 1 , further comprising a heat sink, wherein the heat sink is attached to a side of the baseplate not attached to the electrically insulating substrate.
10. The power semiconductor module of claim 9 , wherein the heat sink is cooled by a gas.
11. The power semiconductor module of claim 9 , wherein the heat sink is cooled by a liquid.
12. A power semiconductor module comprising:
an electrically insulating substrate;
a baseplate attached to a first side of the electrically insulating substrate;
a conductive circuit layer directly attached to a second side of the electrically insulating substrate opposite the first side of the electrically insulating substrate; and
a power semiconductor device physically and electrically attached to a side of the conductive circuit layer not attached to the electrically insulating substrate;
wherein the baseplate and the conductive circuit layer are formed of a material with a coefficient of thermal expansion less than about 8.0×10 −6 /° C. and a density less than about 4 g/cm 3 .
13. The power semiconductor module of claim 12 , wherein the electrically insulating substrate comprises at least one of aluminum nitride and aluminum oxide.
14. The power semiconductor module of claim 12 , wherein the material forming the baseplate and the conductive circuit layer is aluminum silicon carbide.
15. The power semiconductor module of claim 12 , further comprising a heat sink, wherein the heat sink is attached to a side of the baseplate not attached to the electrically insulating substrate.
16. The power semiconductor module of claim 12 , wherein the baseplate is configured as a heat sink, and wherein the baseplate is cooled by a moving fluid.