Chemical mechanical polishing pad and methods of making and using same

1. A method for producing a shape memory chemical mechanical polishing pad, comprising:

providing a shape memory matrix material transformable between an original shape and a programmed shape;

preparing a polishing layer in an original state exhibiting an original thickness, OT, comprising the shape memory matrix material in the original shape;

subjecting the polishing layer to an external force;

setting the shape memory matrix material to the programmed shape to provide the polishing layer in a densified state, wherein the polishing layer exhibits a densified thickness, DT;

removing the external force;

wherein the DT is <80% of the OT;

wherein the shape memory matrix material exhibits a >70% reduction in storage modulus as the temperature of the shape memory matrix material is raised from (T g −20)° C. to (T g +20)° C., wherein T g is the glass transition temperature of the shape memory matrix material measured by dynamical mechanical analysis taking the inflection point in the storage modulus versus temperature curve as the T g ; and,

wherein the polishing layer has a polishing surface adapted for polishing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate.

2. The method of claim 1 , further comprising:

providing a plurality of microelements;

dispersing the plurality of microelements in the shape memory matrix material;

heating the polishing layer to a temperature, T, above the glass transition temperature, T g , for the shape memory matrix material;

wherein the external force is an axial force which axially compresses the polishing layer to the densified thickness, DT, while maintaining the temperature of the polishing layer above the T g of the shape memory matrix material; and wherein the shape memory matrix material is set in the programmed shape by cooling the polishing layer to a temperature below the T g of the shape memory matrix material, while maintaining the axial force.

3. The method of claim 1 , wherein the reduction in storage modulus has a magnitude of >800 MPa.

4. The method of claim 1 , wherein the shape memory matrix material exhibits a T g >45° C. to <80° C.

5. The method of claim 1 , wherein the shape memory matrix material exhibits a >90% reduction in storage modulus as the temperature of the shape memory matrix material is raised from (T g −10)° C. to (T g +10)° C.; and wherein the reduction in storage modulus has a magnitude of >800 MPa.

6. The method of claim 1 , wherein the shape memory matrix material comprises a reaction product of a mixture comprising glycerol propoxylate; polycarbodiimide-modified diphenylmethane diisocyanate; and at least one of polytetrahydrofuran and polycaprolactone.

7. The method of claim 1 , wherein the shape memory matrix material comprises a reaction product of a mixture comprising a polyether-based, toluene diisocyanate terminated liquid urethane prepolymer; and a 4,4′-methylene-bis(2-chloroaniline).

8. A method of polishing a substrate, comprising:

providing a substrate selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;

providing a shape memory chemical mechanical polishing pad produced, using the method of claim 1 ; and,

creating dynamic contact between a polishing surface of the polishing layer and the substrate to polish a surface of the substrate.

9. The method of claim 8 , further comprising:

conditioning the polishing surface of the polishing layer by exposing at east a portion of the polishing layer proximate the polishing surface to an activating stimulus;

wherein the portion of the polishing layer proximate the polishing surface exposed to the activating stimulus transitions from the densified state to a recovered state.