IP Library › Granted Patent US 8,536,492
Granted Patent B2
US 8,536,492 · App. 11/187,188 · Granted Sep 17, 2013

Processing multilayer semiconductors with multiple heat sources

Inventors: Sundar Ramamurthy (Fremont, CA); Andreas G. Hegedus (Burlingame, CA); Randhir Thakur (San Jose, CA)
Assignee: Applied Materials, Inc.
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Quick Facts
Patent No.
US 8,536,492
App. No.
11/187,188
Granted
Sep 17, 2013
Kind
B2
Abstract

A method and apparatus for rapid thermal annealing comprising a plurality of lamps affixed to a lid of the chamber that provide at least one wavelength of light, a laser source extending into the chamber, a substrate support positioned within a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber. A method and apparatus for rapid thermal annealing comprising a plurality of lamps comprising regional control of the lamps and a cooling gas distribution system affixed to a lid of the chamber, a heated substrate support with magnetic levitation extending through a base of the chamber, an edge ring affixed to the substrate support, and a gas distribution assembly in communication with the lid and the base of the chamber.

Claims (16)

1. A chamber for rapid thermal annealing, comprising:

a first heat source affixed to a lid of the chamber, wherein the first heat source is a plurality of UV lamps;

a second heat source fixed on the lid or disposed within the chamber, wherein the first and second heat sources are independently controllable, and wherein the second heat source is a UV lamp having a different wavelength than the plurality of UV lamps;

a substrate support positioned within a base of the chamber; and

a gas distribution assembly in communication with the chamber.

2. A chamber for rapid thermal annealing, comprising:

a first heat source affixed to a lid of the chamber;

a second heat source fixed on the lid or disposed within the chamber, wherein the first and second heat sources are independently controllable;

a substrate support positioned within a base of the chamber;

a gas distribution assembly in communication with the chamber; and

a reflector plate with an interchangeable surface, wherein the gas distribution assembly provides gas distribution through the reflector plate.

3. A chamber for rapid thermal annealing, comprising:

a first heat source affixed to a lid of the chamber, wherein the first heat source is a plurality of UV lamps, wherein the plurality of lamps further comprises a quartz window, and wherein the plurality of lamps further comprises a gas cooling system;

a second heat source fixed on the lid or disposed within the chamber, wherein the first and second heat sources are independently controllable;

a substrate support positioned within a base of the chamber; and

a gas distribution assembly in communication with the chamber.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 15, 2005
From: RAMAMURTHY, SUNDAR; HEGEDUS, ANDREAS G.; THAKUR, RANDHIR
To: APPLIED MATERIALS, INC.
Reel/Frame 016549/0603 →
Continuity (3)
Continuation In Part 10950145 · Sep 24, 2004
Provisional Application 60515037 · Oct 27, 2003
Related Publication 20060018639A1 · Jan 26, 2006