Semiconductor device and method for manufacturing the same
A method for manufacturing a semiconductor device, includes: forming an insulating film containing silicon, oxygen and carbon on at least one of a first substrate and a second substrate; and bonding the first substrate and the second substrate together, with the insulating film interposed therebetween. There can be provided a method capable of manufacturing a semiconductor device having high element density, high performance and high reliability, with high yield.
1. A method for manufacturing a semiconductor device comprising:
forming an insulating film comprising silicon, oxygen and carbon on at least one of a first substrate and a second substrate; and
bonding the first substrate and the second substrate together, with the insulating film interposed therebetween,
wherein the insulating film is formed by a plasma CVD method using an organic siloxane as a raw material gas, and
the organic siloxane comprises a chain unsaturated hydrocarbon group.
2. The method for manufacturing a semiconductor device according to claim 1 , wherein the first substrate and the second substrate are bonded together at a temperature not exceeding 200° C.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein a surface of the insulating film is subjected to an activation treatment before bonding the first substrate and the second substrate together.
4. The method according to claim 3 , wherein the activation treatment is performed by any one of a plasma treatment, an ion beam treatment and an atom beam treatment.
5. The method for manufacturing a semiconductor device according to claim 1 , wherein the first substrate comprises a semiconductor substrate or a semiconductor layer, and the second substrate comprises a semiconductor substrate or a semiconductor layer that is of the same kind as or of a different kind from the semiconductor substrate or the semiconductor layer of the first substrate.
6. The method for manufacturing a semiconductor device according to claim 5 , wherein the first substrate comprises a first semiconductor element.
7. The method for manufacturing a semiconductor device according to claim 6 , wherein the first substrate comprises a multilayer wiring layer provided on the first semiconductor element.
8. The method according to claim 1 , wherein a first insulating film comprising silicon, oxygen and carbon is formed on the first substrate by a plasma CVD method using an organic siloxane comprising a chain unsaturated hydrocarbon group,
a second insulating film comprising silicon, oxygen and carbon is formed on the second substrate by a plasma CVD method using an organic siloxane comprising a chain unsaturated hydrocarbon group, and
the first substrate and the second substrate are bonded together, with the first and second insulating films interposed therebetween.
9. The method according to claim 1 , wherein the chain unsaturated hydrocarbon group is a vinyl group.
10. The method according to claim 1 , wherein the organic siloxane further comprises a six membered ring having three silicon atoms and three oxygen atoms.
11. The method according to claim 1 , wherein the organic siloxane is a cyclic organic siloxane represented by the following chemical fomrula:
wherein R 1 and R 2 are each independently a methyl group, an ethyl group, a propyl group, an isopropyl group, a vinyl group, or an allyl group.
12. The method according to claim 1 , wherein the first substrate and the second substrate are bonded together by applying a press-bonding load of 40 kN or less, under a reduced pressure of 10 −3 Pa or less.
13. A method for manufacturing a semiconductor device comprising:
forming an insulating film comprising silicon, oxygen and carbon on at least one of a first substrate and a second substrate; and
bonding the first substrate and the second substrate together, with the insulating film interposed therebetween,
wherein the first substrate comprises a semiconductor substrate or a semiconductor layer, and the second substrate comprises a semiconductor substrate or a semiconductor layer that is of the same kind as or of a different kind from the semiconductor substrate or the semiconductor layer of the first substrate,
the first substrate comprises a first semiconductor element, and
the second substrate is removed with a part of the second substrate left on the insulating film as a semiconductor residual layer after bonding the first substrate and the second substrate together, and a second semiconductor element is formed by using the semiconductor residual layer.
14. A method for manufacturing a semiconductor device comprising:
forming an insulating film comprising silicon, oxygen and carbon on at least one of a first substrate and a second substrate; and
bonding the first substrate and the second substrate together, with the insulating film interposed therebetween,
wherein the first substrate comprises a semiconductor substrate or a semiconductor layer, and the second substrate comprises a semiconductor substrate or a semiconductor layer that is of the same kind as or of a different kind from the semiconductor substrate or the semiconductor layer of the first substrate,
the first substrate comprises a first semiconductor element, and
the method further comprises before bonding the first substrate and the second substrate together, implanting a hydrogen ion into the second substrate to form a hydrogen ion added layer;
after bonding the first substrate and the second substrate together, performing a heat treatment to embrittle the hydrogen ion added layer, thereby generating delamination in the embrittled portion, and separating the second substrate from the delaminated portion with a bonded surface side portion left as a semiconductor residual layer on the insulating film; and
forming a second semiconductor element by using the semiconductor residual layer.
15. The method for manufacturing a semiconductor device according to claim 14 , wherein the first substrate and the second substrate are bonded together at a temperature not exceeding 200° C., and the heat treatment is performed at a temperature of 250° C. or more and 400° C. or less.
16. A semiconductor device comprising:
a first semiconductor element on a substrate;
a first multilayer wiring layer provided on the first semiconductor element;
an interlayer insulating film comprising silicon, carbon and oxygen, the interlayer insulating film being provided over the first semiconductor element; and
a second semiconductor element provided on the interlayer insulating film, the second semiconductor element being located above the first semiconductor element.
17. The semiconductor device according to claim 16 , wherein the interlayer insulating film is formed of an organic polysiloxane.
18. The semiconductor device according to claim 17 , wherein the organic polysiloxane is a polysiloxane comprising an unsaturated hydrocarbon group.
19. The semiconductor device according to claim 16 , wherein the first semiconductor element and the second semiconductor element are each any one of a silicon element, a germanium element and a compound semiconductor element.
20. The semiconductor device according to claim 16 , wherein the second semiconductor element is an element formed by using a single-crystal semiconductor layer having a film thickness not exceeding 100 nm.
21. The semiconductor device according to claim 16 , wherein the second semiconductor element is a MOSFET.
22. The semiconductor device according to claim 16 , wherein a second multilayer wiring layer is provided on the second semiconductor element; the second multilayer wiring layer comprises a copper wiring layer connected to the second semiconductor element; and the first multilayer wiring layer comprises a copper wiring layer connected to the first semiconductor element.
23. A semiconductor device comprising:
a first semiconductor element;
a first multilayer wiring layer provided on the first semiconductor element;
an interlayer insulating film comprising silicon, carbon and oxygen, the interlayer insulating film being provided on the first multilayer wiring layer; and
a second semiconductor element provided on the interlayer insulating film,
wherein the second semiconductor element is a MOSFET, and
the first multilayer wiring layer comprises a wiring layer disposed immediately below the MOSFET with the interlayer insulating film interposed therebetween, such that a threshold value of the MOSFET can be controlled by applying a potential to the wiring layer.
24. A semiconductor device comprising:
a first semiconductor element;
a first multilayer wiring layer provided on the first semiconductor element;
an interlayer insulating film comprising silicon, carbon and oxygen, the interlayer insulating film being provided on the first multilayer wiring layer; and
a second semiconductor element provided on the interlayer insulating film,
wherein the second semiconductor element is a MOSFET, and
the first multilayer wiring layer comprises a wiring layer disposed immediately below the MOSFET with the interlayer insulating film interposed therebetween, and a high-dielectric film is provided between the interlayer insulating film and the MOSFET.
25. A method for manufacturing a semiconductor device comprising:
forming an insulating film comprising silicon, oxygen and carbon on at least one of a first substrate and a second substrate; and
bonding the first substrate and the second substrate together, with the insulating film interposed therebetween,
wherein the insulating film is formed by a plasma CVD method using an organic siloxane as a raw material gas, and
the organic siloxane is a cyclic organic siloxane.
26. The method according to claim 25 wherein the cyclic organic siloxane comprises a six membered ring having three silicon atoms and three oxygen atoms.
27. The method according to claim 25 , wherein the cyclic organic siloxane is represented by the following chemical formula:
wherein R 1 and R 2 are each independently a methyl group, an ethyl group, a propyl group, an isopropyl group, a vinyl group, or an allyl group.
28. The method according to claim 25 , wherein a first insulating film comprising silicon, oxygen and carbon is formed on the first substrate by a plasma CVD method using a cyclic organic siloxane,
a second insulating film comprising silicon, oxygen and carbon is formed on the second substrate by a plasma CVD method using a cyclic organic siloxane, and
the first substrate and the second substrate are bonded together, with the first and second insulating films interposed therebetween.
29. The method according to claim 25 , wherein the first substrate and the second substrate are bonded together at a temperature not exceeding 200° C.
30. The method according to claim 25 , wherein a surface of the insulating film is subjected to an activation treatment before bonding the first substrate and the second substrate together.
31. The method according to claim 30 , wherein the activation treatment is performed by any one of a plasma treatment, an ion beam treatment and an atom beam treatment.
32. The method according to claim 25 , wherein the first substrate and the second substrate are bonded together by applying a press-bonding load of 40 kN or less, under a reduced pressure of 10 −3 Pa or less.
33. The method according to claim 25 , wherein the first substrate comprises a semiconductor substrate or a semiconductor layer, and the second substrate comprises a semiconductor substrate or a semiconductor layer that is of the same kind as or of a different kind from the semiconductor substrate or the semiconductor layer of the first substrate.
34. The method according to claim 33 , wherein the first substrate comprises a first semiconductor element.
35. The method according to claim 34 , wherein the first substrate further comprises a multilayer wiring layer provided on the first semiconductor element.