Light emitting device and method of manufacturing the same
View Patent ↗In a top emission structure, there has been a problem in that a wiring, a TFT, or the like is provided in regions other than a light emitting region so that light reflected by the wiring reaches eyes of an observer. The present invention prevents light that is reflected by a wire from reaching eyes of an observer by providing a light-absorbing multilayer film ( 61 ) in regions other than a light emitting region. Specifically, the light-absorbing multilayer film ( 61 ) is used as an upper layer of a partition wall (also called as a bank or a barrier) that covers ends of a first electrode ( 66 b ) whereas an organic resin film ( 67 ) is used as a lower layer of the partition wall. The partition wall in the present invention is characterized by being a laminate of three or more layers formed of different materials.
1. A method of manufacturing a light emitting device comprising:
forming a laminate of an insulating film and a light-absorbing multilayer film on a first electrode;
etching the laminate so as to form a partition wall;
forming an organic compound-containing film over the first electrode and the partition wall; and
forming a second electrode over the organic compound-containing film,
wherein the second electrode transmits light,
wherein the partition wall comprises the etched insulating film and the etched light-absorbing multilayer film over the etched insulating film,
wherein the etched insulating film covers an end portion of the first electrode, and
wherein the light-absorbing multilayer film comprises a reflective metal film, a first transparent film comprising nitride, a light-absorbing film comprising nitride, and a second transparent film comprising nitride.
2. The method of manufacturing a light emitting device according to claim 1 , wherein the insulating film is an inorganic insulating film or an organic resin film.
3. The method of manufacturing a light emitting device according to claim 1 , wherein the first electrode is an anode and comprises a metal layer that is larger in work function than the second electrode.
4. The method of manufacturing a light emitting device according to claim 1 , wherein each of the first transparent film and the second transparent film comprises a material selected from the group consisting of Al 2 O 3 , SiO 2 , ZrO 2 , HfO 2 , Sc 2 O 3 , TiO 2 , ITO and ZnO.
5. The method of manufacturing a light emitting device according to claim 1 , wherein at least one of the reflective metal film and the light-absorbing film includes nitrogen.
6. The method of manufacturing a light emitting device according to claim 1 , wherein the reflective metal film is formed of a material selected from the group consisting of Ti, Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, Ta, Inconel and Nichrome.
7. The method of manufacturing a light emitting device according to claim 1 , wherein the organic compound-containing film is formed by an ink-jet.
8. The method of manufacturing a light emitting device according to claim 1 , wherein the organic compound-containing film is formed by an ink-jet under reduced pressure.
9. The method of manufacturing a light emitting device according to claim 1 , wherein the organic compound-containing film includes an organic compound configured to emit white light.
10. A method of manufacturing a light emitting device comprising:
forming an insulating film on a first electrode,
forming a reflective metal film over the insulating film, a first transparent film over the reflective metal film, and a light-absorbing film over the first transparent film so as to form a light-absorbing multilayer film, thereby forming a laminate of the insulating film and the light-absorbing multilayer film;
etching the laminate so as to form a partition wall;
forming an organic compound-containing film over the first electrode and the partition wall; and
forming a second electrode over the organic compound-containing film,
wherein the second electrode transmits light,
wherein the partition wall comprises the etched insulating film and the etched light-absorbing multilayer film over the etched insulating film,
wherein the etched insulating film covers an end portion of the first electrode, and
wherein the light-absorbing multilayer film comprises a second transparent film.
11. The method of manufacturing a light emitting device according to claim 10 , wherein the insulating film is an inorganic insulating film or an organic resin film.
12. The method of manufacturing a light emitting device according to claim 10 , wherein the first electrode is an anode and comprises a metal layer that is larger in work function than the second electrode.
13. The method of manufacturing a light emitting device according to claim 10 , wherein each of the first transparent film and the second transparent film comprises a material selected from the group consisting of Al 2 O 3 , SiO 2 , ZrO 2 , HfO 2 , Sc 2 O 3 , TiO 2 , ITO and ZnO.
14. The method of manufacturing a light emitting device according to claim 10 , wherein at least one of the reflective metal film and the light-absorbing film includes nitrogen.
15. The method of manufacturing a light emitting device according to claim 10 , wherein the reflective metal film is formed of a material selected from the group consisting of Ti, Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, Ta, Inconel and Nichrome.
16. The method of manufacturing a light emitting device according to claim 10 , wherein the organic compound-containing film is formed by an ink-jet.
17. The method of manufacturing a light emitting device according to claim 10 , wherein the organic compound-containing film is formed by an ink-jet under reduced pressure.
18. The method of manufacturing a light emitting device according to claim 10 , wherein the organic compound-containing film includes an organic compound configured to emit white light.
19. A method of manufacturing a light emitting device comprising:
forming a laminate of an insulating film and a light-absorbing multilayer film on a first electrode;
etching the laminate so as to form a partition wall;
forming an organic compound-containing film over the first electrode and the partition wall;
forming a second electrode over the organic compound-containing film; and
forming a wiring over the partition wall and the second electrode,
wherein the second electrode transmits light,
wherein the partition wall comprises the etched insulating film and the etched light-absorbing multilayer film over the etched insulating film,
wherein the etched insulating film covers an end portion of the first electrode, and
wherein the light-absorbing multilayer film comprises a reflective metal film, a first transparent film comprising nitride, a light-absorbing film comprising nitride, and a second transparent film comprising nitride.
20. The method of manufacturing a light emitting device according to claim 19 , wherein the insulating film is an inorganic insulating film or an organic resin film.
21. The method of manufacturing a light emitting device according to claim 19 , wherein the first electrode is an anode and comprises a metal layer that is larger in work function than the second electrode.
22. The method of manufacturing a light emitting device according to claim 19 , wherein each of the first transparent film and the second transparent film comprises a material selected from the group consisting of Al 2 O 3 , SiO 2 , ZrO 2 , HfO 2 , Sc 2 O 3 , TiO 2 , ITO and ZnO.
23. The method of manufacturing a light emitting device according to claim 19 , wherein at least one of the reflective metal film and the light-absorbing film includes nitrogen.
24. The method of manufacturing a light emitting device according to claim 19 , wherein the reflective metal film is formed of a material selected from the group consisting of Ti, Al, Cu, Au, Mo, Ni, Pt, Rh, Ag, W, Cr, Co, Si, Zr, Ta, Inconel and Nichrome.
25. The method of manufacturing a light emitting device according to claim 19 , wherein the organic compound-containing film is formed by an ink-jet.
26. The method of manufacturing a light emitting device according to claim 19 , wherein the organic compound-containing film is formed by an ink-jet under reduced pressure.
27. The method of manufacturing a light emitting device according to claim 19 , wherein the organic compound-containing film includes an organic compound configured to emit white light.