Semiconductor device and method for manufacturing the same
View Patent ↗A semiconductor device includes an oxide semiconductor film including a pair of first regions, a pair of second regions, and a third region; a pair of electrodes in contact with the oxide semiconductor film; a gate insulating film over the oxide semiconductor film; and a gate electrode provided between the pair of electrodes with the gate insulating film interposed therebetween. The pair of first regions overlap with the pair of electrodes, the third region overlaps with the gate electrode, and the pair of second regions are formed between the pair of first regions and the third region. The pair of second regions and the third region each contain nitrogen, phosphorus, or arsenic. The pair of second regions have a higher element concentration than the third region.
1. A semiconductor device comprising:
an oxide semiconductor film comprising a pair of first regions, a pair of second regions, and a third region;
a pair of electrodes in contact with the oxide semiconductor film and overlapping with the pair of first regions;
a gate insulating film over the oxide semiconductor film; and
a gate electrode overlapping with the third region with the gate insulating film interposed therebetween,
wherein the pair of second regions are provided between the pair of first regions and the third region,
wherein the pair of second regions comprise one or more elements selected from the group consisting of nitrogen, phosphorus, and arsenic,
wherein the third region comprises an element selected from the group consisting of nitrogen, phosphorus, and arsenic,
wherein a concentration of the one or more elements in the pair of second regions is higher than a concentration of the element in the third region, and
wherein a concentration of the one or more elements in the pair of the first regions is lower than the concentration of the one or more elements in the pair of the second regions.
2. The semiconductor device according to claim 1 ,
wherein the concentration of the one or more elements in the pair of second regions is higher than or equal to 5×10 21 atoms/cm 3 and lower than 5×10 22 atoms/cm 3 , and
wherein the concentration of the element in the third region is higher than or equal to 5×10 20 atoms/cm 3 and lower than 5×10 21 atoms/cm 3 .
3. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises two or more elements selected from the group consisting of In, Ga, Sn, and Zn.
4. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises In, Ga, and Zn.
5. The semiconductor device according to claim 1 , wherein the gate insulating film is provided over the pair of electrodes.
6. The semiconductor device according to claim 1 , wherein a width of the pair of electrodes is smaller than a width of the oxide semiconductor film in a direction perpendicular to a channel direction.
7. The semiconductor device according to claim 1 , wherein the pair of electrodes cover an end portion of the oxide semiconductor film.
8. The semiconductor device according to claim 1 , wherein the pair of second regions and the third region comprise the same element selected from the group consisting of nitrogen, phosphorus, and arsenic.
9. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises a crystalline oxide semiconductor.
10. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises a crystalline oxide semiconductor with c-axis alignment.
11. A semiconductor device comprising:
an oxide semiconductor film comprising In, Ga, and Zn,
wherein the oxide semiconductor film comprises a channel region and a region in contact with the channel region,
wherein the channel region comprises nitrogen or phosphorus at a concentration of higher than or equal to 5×10 20 atoms/cm 3 and lower than 5×10 21 atoms/cm 3 ,
wherein the region in contact with the channel region comprises nitrogen or phosphorus at a concentration of higher than or equal to 5×10 21 atoms/cm 3 and lower than 5×10 22 atoms/cm 3 , and
wherein the channel region and the region in contact with the channel region comprise the same element selected from the group consisting of nitrogen and phosphorus.