Plasma processing apparatus
The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring.
1. A plasma processing apparatus comprising:
a processing chamber an inside of which is airtightly closable;
a process gas supplying mechanism which supplies a process gas into the processing chamber;
an exhaust mechanism which evacuates the inside of the processing chamber;
a plasma generating mechanism which generates plasma from the process gas;
a holding stage which is provided in the processing chamber and is configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane;
a temperature control mechanism which adjusts a temperature of the holding stage; and
an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring,
wherein a boundary portion, of the adsorbing electrode of the electrostatic chuck, between the substrate to be processed and the focus ring is bent downward.
2. The plasma processing apparatus of claim 1 , wherein the electrostatic chuck comprises insulating layers and the adsorbing electrode interposed between the insulating layers, and the insulating layers and the adsorbing electrode are formed by spraying.
3. The plasma processing apparatus of claim 1 , wherein the plasma generating mechanism generates plasma from the process gas by applying high frequency power between the holding stage and an upper electrode that is provided to face the holding stage.
4. The plasma processing apparatus of claim 1 , wherein the insulating layers of the electrostatic chuck are sprayed coating films formed of Y 2 O 3 or Al 2 O 3 .