Method of patterning of magnetic tunnel junctions
Embodiments of the invention generally relate to methods for fabricating devices on semiconductor substrates. More specifically, embodiments of the invention relate to methods of patterning magnetic materials. Certain embodiments described herein use a reducing chemistry containing a hydrogen gas or hydrogen containing gas with an optional dilution gas at temperatures ranging from 20 to 300 degrees Celsius at a substrate bias less than 1,000 DC voltage to reduce the amount of sputtering and redeposition. Exemplary hydrogen containing gases which may be used with the embodiments described herein include NH 3 , H 2 , CH 4 , C 2 H 4 , SiH 4 , and H 2 S. It has been found that patterning a magnetic tunnel junction with an oxidizer-free gas mixture comprising hydrogen maintains the integrity of the magnetic tunnel junction without producing harmful conductive residue.
1. A method for etching a magnetic material, comprising:
providing a substrate having one or more layers of magnetic material deposited thereon;
forming a patterned mask on the one or more layers of magnetic material; and
etching the one or more layers of magnetic material using an oxidizer-free gas mixture comprising a hydrogen containing gas to remove at least a portion of the one or more layers of magnetic material, wherein the oxidizer-free gas mixture is a halogen-free gas mixture and the hydrogen containing gas is selected from the group consisting of: hydrogen (H 2 ), methane (CH 4 ), acetylene (C 2 H 4 ), silane (SiH 4 ), hydrogen sulfide (H 2 S), and combinations thereof.
2. The method of claim 1 , wherein the oxidizer-free gas mixture further comprises a dilution gas.
3. The method of claim 2 , wherein the dilution gas is selected from the group consisting of: helium (He), xenon (Xe), argon (Ar), nitrogen (N 2 ), and combinations thereof.
4. The method of claim 1 , wherein the magnetic material is selected from at least one of CoFe, NiFe, MgO, Al 2 O 3 , Ru, IrMn, and PtMn.
5. The method of claim 1 , wherein the one or more layers of magnetic material is part of a magneto-resistive random access memory (MRAM) stack.
6. The method of claim 1 , wherein a temperature of the one or more layers of magnetic material is from about 20 degrees Celsius to about 300 degrees Celsius during the etching the one or more layers of magnetic material.
7. The method of claim 6 , wherein the temperature is from about 200 degrees Celsius to about 250 degrees Celsius.
8. The method of claim 7 , wherein a bias of less than 1,000 DC volts is applied to the one or more layers of magnetic material during the etching the one or more layers of magnetic material.
9. The method of claim 1 , further comprising energizing the oxidizer-free gas mixture to a plasma.
10. A method of fabricating a magneto-resistive random access memory (MRAM) device from a film stack comprising a top electrode layer, a free magnetic layer, a tunnel layer, a magnetic film stack, a bottom electrode layer, and a barrier layer formed on a semiconductor substrate, comprising:
forming a patterned mask on the film stack to define the device;
etching the top electrode layer; and
etching the magnetic film stack using an oxidizer-free gas mixture comprising a hydrogen containing gas to remove at least a portion of the magnetic film stack, wherein the oxidizer-free gas mixture is a halogen-free gas mixture and the hydrogen containing gas is selected from the group consisting of: hydrogen (H 2 ), methane (CH 4 ), acetylene (C 2 H 4 ), silane (SiH 4 ), hydrogen sulfide (H 2 S), and combinations thereof.
11. The method of claim 10 , wherein the oxidizer-free gas mixture further comprises a dilution gas.
12. The method of claim 11 , wherein the dilution gas is selected from the group consisting of: helium (He), xenon (Xe), argon (Ar), nitrogen (N 2 ), and combinations thereof.
13. The method of claim 10 , wherein:
the top electrode comprises at least one of tungsten (W), titanium nitride (TiN), titanium (Ti), tantalum (Ta), and tantalum nitride (TaN);
the free magnetic layer comprises at least one of CoFe and NiFe;
the tunnel layer comprises at least one of Al 2 O 3 and MgO;
the magnetic film stack comprises at least one of NiFe, Ru, CoFe, PtMn, and IrMn;
the bottom electrode comprises at least one of tungsten (W), titanium nitride (TiN), titanium (Ti), tantalum (Ta), and tantalum nitride (TaN); and
the barrier layer comprises at least one of SiO 2 and Si 3 N 4 .
14. The method of claim 10 , wherein a temperature of the magnetic film stack is from about 20 degrees Celsius to about 300 degrees Celsius during the etching the magnetic film stack.
15. The method of claim 14 , wherein the temperature is from about 200 degrees Celsius to about 250 degrees Celsius.
16. The method of claim 15 , wherein a bias of less than 1,000 DC volts is applied to the magnetic film stack during the etching the magnetic film stack.