Metal gate electrode of a field effect transistor
An integrated circuit fabrication is disclosed, and more particularly a field effect transistor with a low resistance metal gate electrode is disclosed. An exemplary structure for a metal gate electrode of a field effect transistor comprises a lower portion formed of a first metal material, wherein the lower portion has a recess, a bottom portion and sidewall portions, wherein each of the sidewall portions has a first width; and an upper portion formed of a second metal material, wherein the upper portion has a protrusion and a bulk portion, wherein the bulk portion has a second width, wherein the protrusion extends into the recess, wherein a ratio of the second width to the first width is from about 5 to 10.
1. A metal gate electrode for a field effect transistor comprising:
a lower portion formed of a first metal material, wherein the lower portion has a recess, a bottom portion and sidewall portions, wherein each of the sidewall portions has a first width; and
an upper portion, wherein the upper portion has a protrusion and a bulk portion, wherein the bulk portion has a second width, wherein the protrusion extends into the recess, wherein a ratio of the second width to the first width is from about 5 to 10, and the upper portion comprises a second metal material surrounding a signal metal, the signal metal having a substantially constant width.
2. The metal gate electrode of claim 1 , wherein the lower portion is substantially U-shaped.
3. The metal gate electrode of claim 1 , wherein a ratio of a maximum height of the lower portion to a minimum height of the upper portion is from 0.1 to 0.9.
4. The metal gate electrode of claim 1 , wherein the first metal material comprises a material selected from a group of TiN, TaN, and WN.
5. The metal gate electrode of claim 1 , wherein the upper portion is substantially T-shaped.
6. The metal gate electrode of claim 1 , wherein the second metal material comprises an N-work-function metal.
7. The metal gate electrode of claim 6 , wherein the N-work-function metal comprises a metal selected from a group of Ti, Ag, Al, TiAl, TiAlN, TaC, TaCN, TaSiN, Mn, and Zr.
8. The metal gate electrode of claim 6 , wherein the signal metal is over the N-work-function metal.
9. The metal gate electrode of claim 1 , wherein the second metal material comprises a work-function metal, wherein the work-function metal comprises a bottom portion having a first thickness and sidewall portions having a second thickness less than the first thickness.
10. The metal gate electrode of claim 9 , wherein a ratio of the second thickness to the first thickness is from 0.5 to 0.9.
11. The metal gate electrode of claim 1 , wherein the second metal material comprises a P-work-function metal.
12. The metal gate electrode of claim 11 , wherein the P-work-function metal comprises a metal selected from a group of TiN, WN, TaN, and Ru.
13. The metal gate electrode of claim 11 , wherein the signal metal is over the P-work-function metal.
14. The metal gate electrode of claim 1 , wherein the second metal material comprises a work-function metal, wherein the work-function metal comprises a bottom portion having a first thickness and sidewall portions having a second thickness substantially equal to the first thickness.
15. A metal gate electrode for a field effect transistor comprising:
a lower portion formed of a first metal material, wherein the lower portion has a recess, a bottom portion and sidewall portions, wherein each of the sidewall portions has a first width; and
an upper portion comprising a work function metal and a signal metal, wherein the upper portion has a protrusion and a bulk portion, the bulk portion has a second width greater than the first width, the protrusion substantially fills the recess, and the protrusion is free of the signal metal.
16. The metal gate electrode of claim 15 , wherein the first metal material is different than at least one of the work function metal or the signal metal.
17. The metal gate electrode of claim 15 , wherein the upper portion further comprises at least one of a barrier metal layer, a linear metal layer or a wetting metal layer between the work function metal and the signal metal.
18. A metal gate electrode for a field effect transistor comprising:
a lower portion formed of a first metal material, wherein the lower portion has a recess, a bottom portion and sidewall portions, each of the sidewall portions has a first width, and the lower portion has a thickness ranging from 5 Angstroms ({acute over (Å)}) to 15 {acute over (Å)}; and
an upper portion formed of a second metal material, wherein the upper portion has a protrusion and a bulk portion, the bulk portion has a second width greater than the first width, and the protrusion extends into the recess, and the second metal material surrounding a signal metal, the signal metal having a substantially constant width.
19. The metal gate electrode of claim 18 , wherein the second metal material comprises a work-function metal, the work-function metal comprises a bottom portion having a first thickness and sidewall portions having a second thickness, wherein a ratio of the second thickness to the first thickness is from 0.5 to 0.9.
20. The metal gate electrode of claim 18 , wherein the second metal material substantially fills the recess, and the protrusion is free of the signal metal.