Apparatus of memory array using FinFETs
One or more embodiments relate to a memory device, comprising: a memory element; and a FinFET select device including a fin, a gate line supported by the fin, and a contact element coupled between a surface of the fin and the memory element, the contact element being in direct contact with a top surface of the fin.
1. A memory device, comprising:
a memory element; and
a FinFET select device including
a fin,
a gate line supported by the fin, and
a contact element coupled between a surface of the fin and the memory element, the contact element being in direct contact with a top surface of the fin.
2. The memory device of claim 1 , wherein the contact element directly contacts a sidewall surface of the fin.
3. The memory device of claim 1 , wherein the memory element is a NVM.
4. The memory device of claim 3 , wherein the memory element is selected from a group of memory elements consisting of PCRAM, MRAM, CBRAM, and FeRAM.
5. The memory device array of claim 4 , wherein said PCRAM memory element comprises a chalcogenide memory material.
6. The memory device of claim 1 , wherein said contact element comprises one or more materials selected from the group consisting of tungsten, copper, silver, gold, aluminum, and alloys thereof.
7. The memory device of claim 1 , wherein the contact element at least partially wraps around the fin.
8. A FinFET device, comprising:
a fin;
a gate line supported by the fin; and
a contact element in direct contact with a top surface of the fin.
9. The device of claim 8 , wherein the contact element directly contacts a sidewall surface of the fin.
10. The device of claim 8 , wherein the contact element comprises one or more materials selected from the group consisting of tungsten, copper, silver, gold, aluminum, and alloys thereof.
11. The device of claim 8 , wherein the contact element at least partially wraps around the fin.
12. A FinFET device, comprising:
a fin; and
a contact element in direct contact with a top surface of a source/drain region of the fin.
13. The device of claim 12 , wherein the contact element directly contact a sidewall surface of the fin.
14. The device of claim 12 , wherein the contact element comprises one or more materials selected from the group consisting of tungsten, copper, silver, gold, aluminum, and alloys thereof.
15. The device of claim 12 , wherein the source/drain region is a drain region.
16. The device of claim 12 , wherein the contact element at least partially wraps around the fin.