Semiconductor substrate, semiconductor device and manufacturing method thereof
View Patent ↗It is an object to provide a method for manufacturing a semiconductor substrate in which contamination of a semiconductor layer due to an impurity is prevented and the bonding strength between a support substrate and the semiconductor layer can be increased. An oxide film containing first halogen is formed on a surface of a semiconductor substrate, and the semiconductor substrate is irradiated with ions of second halogen, whereby a separation layer is formed and the second halogen is contained in a semiconductor substrate. Then, heat treatment is performed in a state in which the semiconductor substrate and the support substrate are superposed with an insulating surface containing hydrogen interposed therebetween, whereby part of the semiconductor substrate is separated along the separation layer, so that a semiconductor layer containing the second halogen is provided over the support substrate.
1. A semiconductor substrate comprising:
a single crystal semiconductor layer containing a first halogen;
a first insulating layer on the single crystal semiconductor layer, the first insulating layer containing a second halogen;
a second insulating layer on the first insulating layer, the second insulating layer containing nitrogen;
a third insulating layer on the second insulating layer, the third insulating layer containing hydrogen; and
a support substrate on the third insulating layer, the support substrate being bonded to the second insulating layer with the third insulating layer interposed therebetween,
wherein the first halogen contained in the single crystal semiconductor layer is distributed such that concentration thereof becomes higher toward a surface opposite to the support substrate side of the single crystal semiconductor layer and highest at the surface.
2. A semiconductor substrate according to claim 1 , wherein the second insulating layer includes a single-layer of a single-layer structure or a plurality of films of a stacked structure selected from a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, and/or an aluminum nitride oxide film.
3. A semiconductor substrate according to claim 1 , wherein the support substrate is an aluminosilicate glass, an aluminoborosilicate glass, or a barium borosilicate glass.
4. A semiconductor device comprising:
a single crystal semiconductor layer containing a first halogen;
a first insulating layer on the single crystal semiconductor layer, the first insulating layer containing a second halogen;
a second insulating layer on the first insulating layer, the second insulating layer containing nitrogen;
a third insulating layer on the second insulating layer, the third insulating layer containing hydrogen; and
a support substrate on the third insulating layer, the support substrate being bonded to the second insulating layer with the third insulating layer interposed therebetween,
wherein the first halogen contained in the single crystal semiconductor layer is distributed such that concentration thereof becomes higher toward a surface opposite to the support substrate side of the single crystal semiconductor layer and highest at the surface, and
wherein a field effect transistor in which at least a source region, a drain region, and a channel formation region are provided is formed in the single crystal semiconductor layer.
5. A semiconductor substrate according to claim 4 , wherein the second insulating layer includes a single-layer of a single-layer structure or a plurality of films of a stacked structure selected from a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, and/or an aluminum nitride oxide film.
6. A semiconductor substrate according to claim 4 , wherein the support substrate is an aluminosilicate glass, an aluminoborosilicate glass, or a barium borosilicate glass.
7. A semiconductor substrate comprising:
a single crystal semiconductor layer containing a first halogen;
a first insulating layer on the single crystal semiconductor layer, the first insulating layer containing a second halogen;
a second insulating layer on the first insulating layer, the second insulating layer containing hydrogen;
a third insulating layer on the second insulating layer, the third insulating layer containing nitrogen; and
a support substrate on the third insulating layer, the support substrate being bonded to the first insulating layer with the second insulating layer and the third insulating layer interposed therebetween,
wherein the first halogen contained in the single crystal semiconductor layer is distributed such that concentration thereof becomes higher toward a surface opposite to the support substrate side of the single crystal semiconductor layer and highest at the surface.
8. A semiconductor substrate according to claim 7 , wherein the third insulating layer includes a single-layer of a single-layer structure or a plurality of films of a stacked structure selected from a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, and/or an aluminum nitride oxide film.
9. A semiconductor substrate according to claim 7 , wherein the support substrate is an aluminosilicate glass, an aluminoborosilicate glass, or a barium borosilicate glass.
10. A semiconductor device comprising:
a single crystal semiconductor layer containing a first halogen;
a first insulating layer on the single crystal semiconductor layer, the first insulating layer containing a second halogen;
a second insulating layer on the first insulating layer, the second insulating layer containing hydrogen;
a third insulating layer on the second insulating layer, the third insulating layer containing nitrogen; and
a support substrate on the third insulating layer, the support substrate being bonded to the first insulating layer with the second insulating layer and the third insulating layer interposed therebetween,
wherein the first halogen contained in the single crystal semiconductor layer is distributed such that concentration thereof becomes higher toward a surface opposite to the support substrate side of the single crystal semiconductor layer and highest at the surface, and
wherein a field effect transistor in which at least a source region, a drain region, and a channel formation region are provided is formed in the single crystal semiconductor layer.
11. A semiconductor substrate according to claim 10 , wherein the third insulating layer includes a single-layer of a single-layer structure or a plurality of films of a stacked structure selected from a silicon nitride film, a silicon nitride oxide film, a silicon oxynitride film, an aluminum nitride film, and/or an aluminum nitride oxide film.
12. A semiconductor substrate according to claim 10 , wherein the support substrate is an aluminosilicate glass, an aluminoborosilicate glass, or a barium borosilicate glass.