Semiconductor memory device having stacked structure including resistor-switched based logic circuit and method of manufacturing the same
Semiconductor memory device having a stacking structure including resistor switch based logic circuits. The semiconductor memory device includes a first conductive line that includes a first line portion and a second line portion, wherein the first line portion and the second line portion are electrically separated from each other by an intermediate region disposed between the first and second line portions, a first variable resistance material film that is connected to the first line portion and stores data, and a second variable resistance material film that controls an electrical connection between the first line portion and the second line portion.
1. A semiconductor memory device comprising:
a plurality of resistive memory cells that are connected to a plurality of word lines and a plurality of bit lines and each of which comprises a first variable resistance material film; and
a resistor switch having first, second and third terminals, wherein the resistor switch comprises a second variable resistance material film and is configured to control a current path between the second and third terminals in response to a switching control signal received by the first terminal,
wherein each of the bit lines comprises a first line portion and a second line portion, wherein the first and second line portions are electrically separated from each other by an intermediate region disposed between the first and second line portions, and
wherein the first line portion is connected to the resistive memory cell and the second terminal, the second line portion is connected to the third terminal, and the resistor switch is disposed at the intermediate region and is configured to control a current path between the first and second line portions.
2. The semiconductor memory device of claim 1 , further comprising a control line that is disposed on the resistor switch, is connected to the first terminal, and is configured to control the switching control signal.
3. The semiconductor memory device of claim 2 , wherein the resistor switch is configured to control a data signal through the bit lines to be transmitted between the first and second line portions by a switching operation.
4. The semiconductor memory device of claim 1 , wherein the first and second variable resistance material films comprise at least one identical material.
5. The semiconductor memory device of claim 1 , wherein the resistive memory cell further comprises a switching device disposed between the word lines and bit lines.
6. The semiconductor memory device of claim 5 , wherein the switching device is one of a diode, a varistor, and a threshold switch.
7. The semiconductor memory device of claim 1 , further comprising:
a first layer having a control region that is configured to generate a control signal for controlling the resistor switch; and
a second layer on which the resistive memory cell and the resistor switch are disposed.