High speed interface for dynamic random access memory (DRAM)
View Patent ↗An interface for a dynamic random access memory (DRAM) includes an interface element coupled to a DRAM chip using a first attachment structure, a first portion of the first attachment structure being used to form a wide bandwidth, low speed, parallel interface, a second portion of the first attachment structure, a routing element and a through silicon via (TSV) associated with the DRAM chip being used to form a narrow bandwidth, high speed, serial interface, the interface element configured to convert parallel information to serial information and configured to convert serial information to parallel information.
1. An interface for a dynamic random access memory (DRAM), comprising:
an interface element coupled to a DRAM chip using a first planar attachment structure comprising microbumps, a first plurality of microbumps in the first planar attachment structure being used to form a wide bandwidth, low speed, parallel interface, a second plurality of microbumps in the first planar attachment structure, a routing element and a through silicon via (TSV) associated with the DRAM chip being used to form a narrow bandwidth, high speed, serial interface, the interface element located over and situated within a periphery of the DRAM chip, the DRAM chip being located over and situated within a periphery of a DRAM package, the interface element configured to convert serial address information to parallel address information, convert serial data to parallel data and convert parallel data to serial data.
2. The interface claim 1 , further comprising a DRAM package coupled to the DRAM chip using a second planar attachment structure, the second planar attachment structure forming part of the narrow bandwidth, high speed, serial interface.
3. The interface of claim 1 , wherein the interface element further comprises an address deserializer and a data serializer/deserializer.
4. The interface of claim 1 , wherein the interface element is compatible with a double data rate 4 (DDR4) interface.
5. The interface of claim 4 , wherein the interface element converts the wide bandwidth, low speed, parallel interface to the narrow bandwidth, high speed, serial interface, the narrow bandwidth, high speed, serial interface being compatible with the DDR4 interface.
6. A method for forming an interface for a dynamic random access memory (DRAM), comprising:
coupling an interface element to a DRAM chip using a first planar attachment structure comprising microbumps, a first plurality of microbumps in the first planar attachment structure being used to form a wide bandwidth, low speed, parallel interface, a second plurality of microbumps in the first planar attachment structure, a routing element and a through silicon via (TSV) associated with the DRAM chip being used to form a narrow bandwidth, high speed, serial interface, the interface element located over and situated within a periphery of the DRAM chip, the DRAM chip being located over and situated within a periphery of a DRAM package; and
converting serial address information to parallel address information, converting parallel data to serial data and converting serial data to parallel data.
7. The method of claim 6 , further comprising coupling a DRAM package to the DRAM chip using a second planar attachment structure, the second planar attachment structure forming part of the narrow bandwidth, high speed, serial interface.
8. The method of claim 6 , wherein the interface element further comprises an address deserializer and a data serializer/deserializer.
9. The method of claim 6 , wherein the interface element is compatible with a double data rate 4 (DDR4) interface.
10. The method of claim 9 , further comprising converting the wide bandwidth, low speed, parallel interface to the narrow bandwidth, high speed, serial interface, the narrow bandwidth, high speed, serial interface being compatible with the DDR4 interface.
11. An integrated circuit structure, comprising:
a dynamic random access memory (DRAM) chip coupled to a DRAM package using solder bumps; and
an interface element coupled to the DRAM chip using a planar array of microbumps; the interface element configured to provide conversion between a wide bandwidth, low speed, parallel interface associated with the DRAM chip and a narrow bandwidth, high speed, serial interface associated with an input/output (I/O) standard, the planar array of microbumps comprising a first plurality of microbumps to form the wide bandwidth, low speed, parallel interface associated with the DRAM chip, and a second plurality of microbumps, a routing element and a through silicon via (TSV) associated with the DRAM chip being used to form the narrow bandwidth, high speed, serial interface associated with an input/output (I/O) standard, the interface element located over and situated within a periphery of the DRAM chip, the DRAM chip being located over and situated within a periphery of a DRAM package.
12. The integrated circuit structure of claim 11 , wherein the interface element further comprises an address deserializer configured to convert serial address information to parallel address information and a data serializer/deserializer configured to convert parallel data to serial data and configured to convert serial data to parallel data.
13. The integrated circuit structure of claim 12 , wherein the interface element is compatible with a double data rate 4 (DDR4) interface.
14. The integrated circuit structure of claim 13 , wherein the interface element converts the wide bandwidth, low speed, parallel interface to the narrow bandwidth, high speed, serial interface, the narrow bandwidth, high speed, serial interface being compatible with the DDR4 interface.