Switching element and method for manufacturing switching element
A switching element of the present invention utilizes electro-chemical reactions to operate, and comprises ion conductive layer 54 capable of conducting metal ions, first electrode 49 arranged in contact with the ion conductive layer, and second electrode 58 for supplying metal ions to the ion conductive layer, wherein an oxygen absorption layer 55 which contains a material more prone to oxidization than the second electrode is formed in contact with the second electrode.
1. A switching element comprising:
an ion conductive layer capable of conducting a metal ion;
a first electrode arranged in contact with said ion conductive layer;
a second electrode for supplying said metal ion to said ion conductive layer, said switching element utilizing an electro-chemical reaction to operate; and
an oxygen absorption layer, including a material more prone to oxidization than said second electrode, is arranged in contact with said second electrode;
wherein said material of said oxygen absorption layer is tantalum and a thickness of said oxygen absorption layer is less than 2 nm,
wherein said oxygen absorption layer is arranged between said second electrode and said ion conductive layer; and
said oxygen absorption layer, when oxidized, has an ion conductive property with said metal ion serving as a carrier.
2. A switching element comprising:
an ion conductive layer capable of conducting a metal ion;
a first electrode arranged in contact with said ion conductive layer;
a second electrode which exhibits a change in electric characteristics with said first electrode due to deposition or dissolution of said metal ion;
a third electrode for supplying said metal ion to said ion conductive layer, said switching element utilizing an electro-chemical reaction to operate; and
an oxygen absorption layer, including a material more prone to oxidization than said third electrode, is arranged in contact with said third electrode;
wherein said material of said oxygen absorption layer is tantalum and a thickness of said oxygen absorption layer is less than 2 nm,
wherein said oxygen absorption layer is arranged between said third electrode and said ion conductive layer; and
said oxygen absorption layer, when oxidized, has an ion conductive property said metal ion serving as a carrier.
3. The switching element according to claim 1 , wherein said ion conductive layer includes tantalum oxide.
4. The switching element according to claim 2 , wherein said ion conductive layer includes tantalum oxide.
5. The switching element according to claim 1 , wherein said oxygen absorption layer is arranged in an insular shape between said second electrode and said ion conductive layer.
6. The switching element according to claim 2 , wherein said oxygen absorption layer is arranged in an insular shape between said third electrode and said ion conductive layer.
7. The switching element according to claim 1 , wherein a material of said second electrode is copper, and said first electrode is made of a material which is less prone to become a metal ion as compared with copper.
8. The switching element according to claim 2 , wherein a material of said third electrode is copper, and said first electrode and said second electrode are made of a material which is less prone to become a metal ion as compared with copper.