Thin film transistors having multi-layer channel
A transistor may include: a gate insulting layer, a gate electrode formed on a bottom side of the gate insulating layer, a channel layer formed on a top side of the gate insulating layer, a source electrode that contacts a first portion of the channel layer, and a drain electrode that contacts a second portion of the channel layer. The channel layer may have a double-layer structure, including an upper layer and a lower layer. The upper layer may have a carrier concentration lower than that of the lower layer. The upper layer may be doped with a carrier acceptor in order to have an electrical resistance higher than that of the lower layer.
1. A thin film transistor, comprising:
a gate insulating layer;
a gate electrode formed on a bottom side of the gate insulating layer;
a channel layer formed on a top side of the gate insulating layer;
a source electrode that contacts a first portion of the channel layer; and
a drain electrode that contacts a second portion of the channel layer;
wherein the channel layer has a double-layer structure, including an uppermost layer and a lower layer, the lower layer being disposed between the uppermost layer and the gate insulating layer,
wherein the uppermost layer has a carrier concentration lower than that of the lower layer, and
wherein the uppermost layer is doped with a carrier acceptor in order to have an electrical resistance higher than that of the lower layer.
2. The transistor of claim 1 , wherein the channel layer is formed of a ZnO based material.
3. The transistor of claim 1 , wherein the channel layer is formed of a(In 2 O 3 ).b(Ga 2 O 3 ).c(ZnO), and
where a, b, and c are real numbers such that a≧0, b≧0, and c>0.
4. The transistor of claim 1 , wherein the carrier acceptor comprises one or more of Cu, Ag, Li, Na, K, Mg, Ca, Be, Au, Rg, Ni, Co, Rh, Pd, Ir, Pt, V, Nb, Ta, and N.
5. The transistor of claim 4 , wherein the carrier acceptor comprises Cu, and
wherein the Cu content of the uppermost layer is 29-44 atomic %.
6. The transistor of claim 5 , wherein a thickness of the uppermost layer is greater than or equal to 10 nm and less than or equal to 100 nm.