IP Library Granted Patent US 8,568,199
Granted Patent B2
US 8,568,199 · App. 12/897,973 · Granted Oct 29, 2013

Polishing endpoint detection apparatus

Inventors: Shinrou Ohta (Tokyo, JP); Atsushi Shigeta (Kanagawa, JP)
Assignees: Ebara Corporation; Kabushiki Kaisha Toshiba
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Quick Facts
Patent No.
US 8,568,199
App. No.
12/897,973
Granted
Oct 29, 2013
Kind
B2
Abstract

Method and apparatus for detecting an accurate polishing endpoint of a substrate based on a change in polishing rate are provided. The method includes: applying a light to the surface of the substrate and receiving a reflected light from the substrate; obtaining a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; selecting at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained; calculating a difference in the reflection intensity at a predetermined wavelength between the spectral profiles selected; determining an amount of change in the reflection intensity from the difference; and determining a polishing endpoint based on the amount of change.

Claims (41)

1. An apparatus for detecting a polishing endpoint of a substrate including a film, the apparatus comprising:

a light-applying unit configured to apply a light to a film-side surface of the substrate;

a light-receiving unit configured to receive a reflected light from the substrate;

a spectroscope configured to obtain a plurality of spectral profiles at predetermined time intervals, each spectral profile indicating reflection intensity at each wavelength of the reflected light; and

a monitoring unit configured to monitor an amount of change in the reflection intensity obtained from the plurality of spectral profiles,

wherein said monitoring unit is configured to

select at least one pair of spectral profiles, including a latest spectral profile, from the plurality of spectral profiles obtained,

calculate a difference in the reflection intensity at at least one predetermined wavelength between the spectral profiles selected,

determine an amount of change in the reflection intensity from the difference, and

determine a polishing endpoint based on the amount of change.

2. The apparatus according to claim 1 , wherein said monitoring unit is configured to determine the polishing endpoint by detecting that the amount of change has reached a predetermined threshold value.

3. The apparatus according to claim 1 , wherein said monitoring unit is configured to determine the amount of change in the reflection intensity by squaring the difference in the reflection intensity.

4. The apparatus according to claim 1 , wherein:

the at least one predetermined wavelength is a plurality of predetermined wavelengths; and

said monitoring unit is configured to determine the amount of change in the reflection intensity from a sum of differences in the reflection intensity at the plurality of predetermined wavelengths.

5. The apparatus according to claim 1 , wherein:

the at least one pair of spectral profiles comprises a plurality of pairs of spectral profiles, each pair including the latest spectral profile; and

said monitoring unit is configured to

calculate a difference in the reflection intensity at the at least one predetermined wavelength between the spectral profiles in each of the plurality of pairs to obtain a plurality of differences in the reflection intensity for the plurality of pairs of spectral profiles,

determine a plurality of amounts of change in the reflection intensity from the plurality of differences,

calculate an average or a sum of the plurality of amounts of change, and

determine the polishing endpoint based on the average or the sum.

6. The apparatus according to claim 1 , wherein:

the at least one pair of spectral profiles comprises a plurality of pairs of spectral profiles, each pair including the latest spectral profile; and

said monitoring unit is configured to

calculate a difference in the reflection intensity at the at least one predetermined wavelength between the spectral profiles in each of the plurality of pairs to obtain a plurality of differences in the reflection intensity for the plurality of pairs of spectral profiles,

determine a plurality of amounts of change in the reflection intensity from the plurality of differences, and

determine the polishing endpoint by detecting that at least one of the plurality of amounts of change in the reflection intensity has reached a predetermined threshold value.

7. The apparatus according to claim 1 , wherein said monitoring unit is configured to

create a spectral index for each of the selected spectral profiles by dividing reflection intensity at the at least one predetermined wavelength by reflection intensity at another wavelength,

calculate a difference in the spectral index between the spectral profiles selected, and

determine the amount of change in the reflection intensity from the difference in the spectral index.

8. The apparatus according to claim 1 , wherein said monitoring unit is configured to

differentiate the amount of change in the reflection intensity that varies with polishing time to obtain a derivative value, and

determine the polishing endpoint based on the amount of change in the reflection intensity and the derivative value.

9. The apparatus according to claim 1 , wherein the predetermined time intervals are established such that a phase difference between the spectral profiles selected is approximately a half cycle.

10. The apparatus according to claim 9 , wherein the at least one predetermined wavelength is selected from a wavelength range which is such that the phase difference between the spectral profiles selected is approximately a half cycle.

11. A polishing apparatus, comprising:

a polishing table for supporting a polishing pad;

a top ring configured to press a substrate having a film against the polishing pad; and

the apparatus for detecting a polishing endpoint of the substrate according to claim 1 .

Assignments (5)
CHANGE OF NAME Recorded Dec 23, 2021
From: K.K. PANGEA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 058573/0535 →
MERGER Recorded Dec 23, 2021
From: TOSHIBA MEMORY CORPORATION
To: K.K. PANGEA
Reel/Frame 058573/0542 →
CHANGE OF NAME Recorded Dec 23, 2021
From: TOSHIBA MEMORY CORPORATION
To: KIOXIA CORPORATION
Reel/Frame 058573/0657 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 11, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: TOSHIBA MEMORY CORPORATION
Reel/Frame 043546/0955 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 21, 2010
From: OHTA, SHINROU; SHIGETA, ATSUSHI
To: EBARA CORPORATION; KABUSHIKI KAISHA TOSHIBA
Reel/Frame 025174/0189 →
Priority Claims (1)
JP 2009-232135 · Oct 6, 2009 · national
Continuity (1)
Related Publication 20110081829A1 · Apr 7, 2011