HVPE chamber hardware
Embodiments disclosed herein generally relate to an HVPE chamber. The chamber may have two separate precursor sources coupled thereto to permit two separate layers to be deposited. For example, a gallium source and a separate aluminum source may be coupled to the processing chamber to permit gallium nitride and aluminum nitride to be separately deposited onto a substrate in the same processing chamber. The nitrogen may be introduced to the processing chamber at a separate location from the gallium and the aluminum and at a lower temperature. The different temperatures causes the gases to mix together, react and deposit on the substrate with little or no deposition on the chamber walls.
1. An apparatus, comprising:
a first chamber body and a second chamber body, the first and second chamber bodies having chamber walls;
a reactive product boat coupled to the second chamber body;
a first reactive product source disposed within the reactive product boat;
a second reactive source disposed within the reactive product boat;
a first heating element coupled to the reactive product boat;
a third reactive source coupled to the first chamber body and disposed outside of the reactive product boat;
a second heating element embedded within the chamber walls of the first chamber body;
a gas distribution element disposed within the first chamber body and coupled with the third reactive source;
a susceptor disposed within the first chamber body opposite the gas distribution element;
one or more third heating elements disposed below the susceptor;
a first gas ring disposed within the first chamber body along the chamber walls peripheral to the susceptor and coupled to both the first reactive product and the second reactive product; and
a second gas ring coupled to the first gas ring, the second gas ring having a plurality of openings therethrough to permit gas to enter the first chamber body.
2. The apparatus of claim 1 , wherein the first chamber body comprises one or more rings that comprise opaque quartz.
3. The apparatus of claim 2 , wherein the first chamber body has one or more walls that comprise clear quartz.
4. The apparatus of claim 1 , further comprising a chamber lid coupled with the chamber walls of the first chamber body above the gas distribution element, wherein the gas distribution element comprises a gas distribution showerhead.
5. The apparatus of claim 4 , wherein the chamber lid comprises quartz.
6. The apparatus of claim 5 , wherein the susceptor comprises silicon carbide.
7. The apparatus of claim 6 , further comprising a fourth reactive source coupled with both the first reactive source and the second reactive source.
8. The apparatus of claim 7 , further comprising an inert gas source coupled with both the first reactive gas source and the second reactive gas source.
9. The apparatus of claim 8 , further comprising a vacuum pump coupled with the first chamber body at a location below the susceptor.
10. The apparatus of claim 9 , wherein the first gas tube and the second gas tube each comprise clear quartz.
11. The apparatus of claim 10 , wherein the apparatus is a hydride vapor phase epitaxy apparatus.