Nitride-based semiconductor light-emitting device and manufacturing method thereof
A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.
1. A nitride-based semiconductor light-emitting device comprising:
a translucent base;
a first conductivity type electrode layer comprising at least one of a metal thin-film layer and a transparent conductive layer;
a first conductivity type nitride-based semiconductor layer;
a light-emitting layer; and
a second conductivity type nitride-based semiconductor layer, wherein
the translucent base, the first conductivity type electrode layer, the first conductivity type nitride-based semiconductor layer, the light-emitting layer, and the second conductivity type nitride-based semiconductor layer are successively layered in this order,
the translucent base has a thickness of approximately 100 μm,
a thick-film layer is embedded in said translucent base, and
said translucent base is composed of a translucent resin.
2. The nitride-based semiconductor light-emitting device according to claim 1 , wherein said thick-film layer is composed of a plated layer.
3. The nitride-based semiconductor light-emitting device according to claim 1 , wherein said thick-film layer is composed of a metal bump.