Through-silicon vias for semicondcutor substrate and method of manufacture

1. A semiconductor component comprising:

a semiconductor substrate having a top surface;

an opening extending from the top surface into the semiconductor substrate, wherein the opening comprises an interior surface;

a first dielectric liner having a first compressive stress disposed on the interior surface of the opening;

a second dielectric liner having a tensile stress disposed on the first dielectric liner;

a third dielectric liner having a second compressive stress disposed on the second dielectric liner;

a metal barrier layer disposed on the third dielectric liner; and

a conductive material disposed on the metal barrier layer and filling the opening.

2. The semiconductor component of claim 1 , wherein the first dielectric liner and the third dielectric liner comprise the same dielectric material.

3. The semiconductor component of claim 1 , wherein the first dielectric liner and the third dielectric liner comprise different dielectric materials.

4. The semiconductor component of claim 1 , wherein the first compressive stress and the second compressive stress are equal.

5. The semiconductor component of claim 1 , wherein the first compressive stress and the second compressive stress differ from each other.

6. The semiconductor component of claim 1 , wherein at least one of the first compressive stress and the second compressive stress is within a range of 100 MPa to 400 MPa.

7. The semiconductor component of claim 1 , wherein the tensile stress is within a range of 50 MPa to 300 MPa.

8. The semiconductor component of claim 1 , wherein the first dielectric liner has a first etching rate in a HF solution, the second dielectric liner has a second etching rate in the HF solution, and the first etching rate is less than the second etching rate.

9. The semiconductor component of claim 8 , wherein the third dielectric liner has a third etching rate in the HF solution, and the third etching rate is less than the second etching rate.

10. A semiconductor component comprising:

a substrate having a top surface;

an opening extending from the top surface into the substrate, wherein the opening comprises an interior surface;

a first dielectric liner having a first stress disposed on the interior surface of the opening;

a second dielectric liner having a second stress disposed on the first dielectric liner, wherein a direction of the first stress is opposite a direction of the second stress;

a third dielectric liner having a third stress disposed on the second dielectric liner, wherein a direction of the third stress is equal to the direction of the first stress; and

a conductive material disposed on within the third dielectric liner.

11. The semiconductor component of claim 10 , wherein the first stress is a compressive stress.

12. The semiconductor component of claim 10 , wherein an etch rate of the first dielectric liner in a HF solution is less than an etch rate of the second dielectric liner in the HF solution.

13. The semiconductor component of claim 10 , wherein an etch rate of the third dielectric liner in a HF solution is less than an etch rate of the second dielectric liner in the HF solution.

14. The semiconductor component of claim 10 , wherein a magnitude of the first stress is different than a magnitude of the third stress.

15. The semiconductor component of claim 10 , further comprising a metal barrier layer between the third dielectric liner and the conductive metal, wherein the metal barrier layer comprises a material selected from the group consisting of tantalum, titanium, tantalum nitride and titanium nitride.

16. The semiconductor component of claim 10 , wherein the first dielectric liner has a tapered profile, the second dielectric liner has a tapered profile, and the third dielectric liner has a tapered profile.

17. The semiconductor component of claim 10 , wherein the first dielectric liner and the third dielectric liner independently comprise a material selected from the group consisting of silicon oxide, silicon nitride, silicon oxynitride and phosphosilicate glass (PSG).

18. The semiconductor component of claim 10 , wherein the second dielectric liner is conformal with the first dielectric liner, and the third dielectric liner is conformal with the second dielectric liner.

19. A method for forming a semiconductor component comprising:

providing a semiconductor substrate having a top surface;

forming an opening having an interior surface extending from the top surface into the semiconductor substrate, wherein the opening has a top portion and a bottom portion;

depositing a first dielectric liner on the interior surface by a plasma enhanced chemical vapor deposition (PECVD);

depositing a second dielectric liner on the first dielectric liner by a conformal deposition;

depositing a third dielectric liner on the second dielectric liner by a PECVD;

depositing a metal barrier layer on the third dielectric liner; and

filling the remaining opening after the deposition of the three dielectric liners and the metal barrier layer with a conductive material.

20. The method of claim 19 , wherein the second dielectric liner has a thickness T3 on the top portion and a thickness T4 on the bottom portion, and a ratio R2 of T3 to T4 is about 1 to about 5.

21. A semiconductor component comprising:

a substrate having a top surface;

an opening extending from the top surface into the substrate, wherein the opening comprises an interior surface;

a first dielectric liner having a first stress disposed over the interior surface of the opening;

a second dielectric liner having a second stress disposed over the first dielectric liner, wherein a direction of the first stress is opposite a direction of the second stress;

a metal barrier disposed over the second dielectric liner; and

a conductive material disposed over the metal barrier.