Laser-assisted nanomaterial deposition, nanomanufacturing, in situ monitoring and associated apparatus
Laser-assisted apparatus and methods for performing nanoscale material processing, including nanodeposition of materials, can be controlled very precisely to yield both simple and complex structures with sizes less than 100 nm. Optical or thermal energy in the near field of a photon (laser) pulse is used to fabricate submicron and nanometer structures on a substrate. A wide variety of laser material processing techniques can be adapted for use including, subtractive (e.g., ablation, machining or chemical etching), additive (e.g., chemical vapor deposition, selective self-assembly), and modification (e.g., phase transformation, doping) processes. Additionally, the apparatus can be integrated into imaging instruments, such as SEM and TEM, to allow for real-time imaging of the material processing.
1. A method for performing nanoscale material processing of a material target, comprising:
a) providing a target in an electron beam instrument;
b) providing a laser configured to produce laser radiation having a wavelength;
c) providing a probe less than one wavelength away from the target in a near field region;
d) using the laser to provide a laser radiation pulse to the probe, thus causing the probe to emit energy;
e) allowing the energy emitted from the probe to interact with one or more of the target and precursor molecules provided between the probe on the target, such that the target is processed; and
further comprising in situ monitoring of the target with a non-diffraction limited technique as operations a) to e) are being performed.
2. The method of claim 1 wherein a structure with a size less of than 100 nm results from the material processing.
3. The method of claim 1 wherein the target is a substrate.
4. The method of claim 1 wherein the target is previously deposited material.
5. The method of claim 1 wherein using the laser to provide a laser radiation pulse to the probe comprises directing the laser pulse through the probe.
6. The method of claim 1 wherein using the laser to provide a laser radiation pulse to the probe comprises directing the laser pulse to the probe from outside the probe.
7. The method of claim 1 wherein the energy emitted from the probe is in the form of photons.
8. The method of claim 1 wherein the energy emitted from the probe is thermal energy.
9. The method of claim 1 wherein the material processing comprises a method for depositing material onto a target, comprising:
f) providing precursor molecules between the probe and the target;
g) allowing the precursor molecules to interact with the energy emitted from the probe; and
h) dissociating the precursor molecules in the near field region, thus depositing material onto the target.
10. The method of claim 9 wherein depositing material comprises depositing localized submicron and nanometer structures.
11. The method of claim 9 , further comprising applying a bias voltage between the probe and the target before operation g).
12. The method of claim 1 wherein the material processing is selected from the group consisting of additive, subtractive and modification processing and combinations thereof.
13. The method of claim 12 wherein the additive material process is selected from the group consisting of chemical vapor deposition and selective self-assembly and combinations thereof.
14. The method of claim 12 wherein the subtractive material process is selected from the group consisting of ablation, machining and chemical etching and combinations thereof.
15. The method of claim 12 wherein the modification material process is selected from the group consisting of phase transformation and doping and combinations thereof.
16. A method of depositing material onto a target, comprising:
a) providing a target in an electron beam instrument;
b) providing precursor molecules adjacent the target;
c) providing a series of laser pulses having a particular wavelength through a probe located less than one wavelength from the target;
d) allowing the laser pulses to pass through at least some of the precursor molecules, thus dissociating the precursor molecules and depositing material onto the target; and
further comprising in situ monitoring of the target with a non-diffraction limited technique as operations a) to d) are being performed.
17. The method of claim 16 wherein the laser pulse is produced by a near field scanning optical microscope.
18. A method of depositing material onto a target, comprising:
a) providing a target in an electron beam instrument;
b) providing precursor molecules adjacent the target;
c) providing a series of laser pulses having a particular wavelength to the outside of a probe located less than one wavelength from the target; and
d) allowing a thermal field generated between the probe and the target to dissociate at least some of the precursor molecules, thus depositing material onto the target; and
further comprising in situ monitoring of the target with a non-diffraction limited technique as operations a) to d) are being performed.
19. The method of claim 18 wherein the laser pulse is produced by a near field scanning optical microscope.
20. The method of claim 18 wherein dissociating the precursor molecules occurs in a near field region of the laser pulse.
21. A method of fabricating a submicron and nanometer structure, comprising:
providing a substrate;
depositing a catalytic dot onto the substrate by a method comprising the steps of:
a) providing a substrate;
b) providing a laser configured to produce laser radiation having a wavelength;
c) providing a probe less than one wavelength away from the substrate;
d) providing precursor molecules between the probe and the substrate;
e) using the laser to provide a laser radiation pulse to the probe, thus causing the probe to emit energy;
f) allowing the precursor molecules to interact with the energy emitted from the probe; and
g) dissociating the precursor molecules in the near field region, thus depositing the catalytic dot; and
growing the structure onto the catalytic dot by continuing steps e through g while moving the probe away from the dot as material is deposited, maintaining a distance of less than one wavelength between the probe and the deposited material.
22. The method of claim 21 wherein the method is conducted in an electron beam instrument and the method further comprises in situ monitoring of at least one of the substrate and the structure during performance of the method.